Compositional ratio effects on the device stability of IGZO TFTs

Shinhyuk Yang; Jun Yong Bak; Sung Min Yoon; Min Ki Ryu; Him Chan Oh; Chi Sun Hwang; Sang Hee Ko Park; Jin Jang

Compositional ratio effects on the device stability of IGZO TFTs

Shinhyuk Yang
, Jun Yong Bak
, Sung Min Yoon
, Min Ki Ryu
, Him Chan Oh
, Chi Sun Hwang
, Sang Hee Ko Park
, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We fabricated transparent In-Ga-Zn-O TFTs with topgate structure on glass substrate. The IGZO semiconductors with various compositional ratios were used to compare that effect on bias stability and photon-induced negative bias instability. We found that deep level state in IGZO semiconductors highly affected by In/Ga ratio.

Original language	English
Title of host publication	31st International Display Research Conference 2011, EuroDisplay 2011
Pages	206-208
Number of pages	3
Publication status	Published - 2011
Event	31st International Display Research Conference 2011, EuroDisplay 2011 - Arcachon, France Duration: 19 Sept 2011 → 22 Sept 2011

Publication series

Name	SID Conference Record of the International Display Research Conference
ISSN (Print)	1083-1312

Conference

Conference	31st International Display Research Conference 2011, EuroDisplay 2011
Country/Territory	France
City	Arcachon
Period	19/09/11 → 22/09/11

Cite this

@inproceedings{c729c75966e84128a7b1428dda14cf5b,

title = "Compositional ratio effects on the device stability of IGZO TFTs",

abstract = "We fabricated transparent In-Ga-Zn-O TFTs with topgate structure on glass substrate. The IGZO semiconductors with various compositional ratios were used to compare that effect on bias stability and photon-induced negative bias instability. We found that deep level state in IGZO semiconductors highly affected by In/Ga ratio.",

author = "Shinhyuk Yang and Bak, \{Jun Yong\} and Yoon, \{Sung Min\} and Ryu, \{Min Ki\} and Oh, \{Him Chan\} and Hwang, \{Chi Sun\} and Park, \{Sang Hee Ko\} and Jin Jang",

year = "2011",

language = "English",

isbn = "9781618396006",

series = "SID Conference Record of the International Display Research Conference",

pages = "206--208",

booktitle = "31st International Display Research Conference 2011, EuroDisplay 2011",

}

Yang, S, Bak, JY, Yoon, SM, Ryu, MK, Oh, HC, Hwang, CS, Park, SHK & Jang, J 2011, Compositional ratio effects on the device stability of IGZO TFTs. in 31st International Display Research Conference 2011, EuroDisplay 2011. SID Conference Record of the International Display Research Conference, pp. 206-208, 31st International Display Research Conference 2011, EuroDisplay 2011, Arcachon, France, 19/09/11.

Compositional ratio effects on the device stability of IGZO TFTs. / Yang, Shinhyuk; Bak, Jun Yong; Yoon, Sung Min et al.
31st International Display Research Conference 2011, EuroDisplay 2011. 2011. p. 206-208 (SID Conference Record of the International Display Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Compositional ratio effects on the device stability of IGZO TFTs

AU - Yang, Shinhyuk

AU - Bak, Jun Yong

AU - Yoon, Sung Min

AU - Ryu, Min Ki

AU - Oh, Him Chan

AU - Hwang, Chi Sun

AU - Park, Sang Hee Ko

AU - Jang, Jin

PY - 2011

Y1 - 2011

N2 - We fabricated transparent In-Ga-Zn-O TFTs with topgate structure on glass substrate. The IGZO semiconductors with various compositional ratios were used to compare that effect on bias stability and photon-induced negative bias instability. We found that deep level state in IGZO semiconductors highly affected by In/Ga ratio.

AB - We fabricated transparent In-Ga-Zn-O TFTs with topgate structure on glass substrate. The IGZO semiconductors with various compositional ratios were used to compare that effect on bias stability and photon-induced negative bias instability. We found that deep level state in IGZO semiconductors highly affected by In/Ga ratio.

UR - https://www.scopus.com/pages/publications/84860851936

M3 - Conference contribution

AN - SCOPUS:84860851936

SN - 9781618396006

T3 - SID Conference Record of the International Display Research Conference

SP - 206

EP - 208

BT - 31st International Display Research Conference 2011, EuroDisplay 2011

T2 - 31st International Display Research Conference 2011, EuroDisplay 2011

Y2 - 19 September 2011 through 22 September 2011

ER -

Compositional ratio effects on the device stability of IGZO TFTs

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