Control of amorphous silica nanowire growth by oxygen content of Si-rich oxide

Dong Hee Shin; Sung Kim; Seung Hui Hong; Suk Ho Choi; Kyung Joong Kim

doi:10.1088/0957-4484/21/4/045604

Control of amorphous silica nanowire growth by oxygen content of Si-rich oxide

Dong Hee Shin, Sung Kim, Seung Hui Hong, Suk Ho Choi, Kyung Joong Kim

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Ni-coated Si-rich oxide (SRO, SiO_x) on a p-type Si wafer has been annealed with Si powder to grow silica nanowires (NWs), which have a composition of stoichiometric SiO₂, irrespective of x. The diameters of the NWs are well controlled from 82 to 23nm by increasing x from 0.4 to 1.2 and they have a uniform distribution at a fixed x. These results suggest that the oxygen content (x) plays a crucial role in determining the diameter of the NWs at the early stage of the NW formation. The growth behaviors of the NWs are explained well based on a modified vapor-liquid-solid mechanism.

Original language	English
Article number	045604
Journal	Nanotechnology
Volume	21
Issue number	4
DOIs	https://doi.org/10.1088/0957-4484/21/4/045604
Publication status	Published - 2010

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abstract = "Ni-coated Si-rich oxide (SRO, SiOx) on a p-type Si wafer has been annealed with Si powder to grow silica nanowires (NWs), which have a composition of stoichiometric SiO2, irrespective of x. The diameters of the NWs are well controlled from 82 to 23nm by increasing x from 0.4 to 1.2 and they have a uniform distribution at a fixed x. These results suggest that the oxygen content (x) plays a crucial role in determining the diameter of the NWs at the early stage of the NW formation. The growth behaviors of the NWs are explained well based on a modified vapor-liquid-solid mechanism.",

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AU - Kim, Kyung Joong

PY - 2010

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AB - Ni-coated Si-rich oxide (SRO, SiOx) on a p-type Si wafer has been annealed with Si powder to grow silica nanowires (NWs), which have a composition of stoichiometric SiO2, irrespective of x. The diameters of the NWs are well controlled from 82 to 23nm by increasing x from 0.4 to 1.2 and they have a uniform distribution at a fixed x. These results suggest that the oxygen content (x) plays a crucial role in determining the diameter of the NWs at the early stage of the NW formation. The growth behaviors of the NWs are explained well based on a modified vapor-liquid-solid mechanism.

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Control of amorphous silica nanowire growth by oxygen content of Si-rich oxide

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