Control of the threshold voltage by using the oxygen partial pressure in sputter-deposited InGaZnO 4 thin-film transistors

Jeung Sun Ahn; Kwang Bae Lee

doi:10.3938/jkps.60.1625

Control of the threshold voltage by using the oxygen partial pressure in sputter-deposited InGaZnO ₄ thin-film transistors

Jeung Sun Ahn
, Kwang Bae Lee

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigate the controllability of the threshold voltage (V _th) by varying the O ₂ partial pressure in sputter-deposited of InGaZnO ₄ thin-film transistors (IGZO TFTs). We showed that the V _th values could be linearly controlled from a depletion-type of V _th ~ -6 V to an enhancement-type of V _th ~ 2 V, without any abrupt change in μ _sat, I _on/off, and S, by only changing the O ₂ partial pressure in a fixed region of the Ar partial pressure. Such V _th controllability is thought to be due to the proper reduction of defect states and, in turn, to the preservation of high-performance TFT behavior.

Original language	English
Pages (from-to)	1625-1628
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	60
Issue number	10
DOIs	https://doi.org/10.3938/jkps.60.1625
Publication status	Published - May 2012

Bibliographical note

Funding Information:
This research was supported by the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (Grant No. 2012-0001055) and partly by the Sangji University Project 2010.

Keywords

Dc conductivity
Indium-gallium-zinc-oxide
Oxygen partial pressure
Thin-film transistors
Threshold voltage

Access to Document

10.3938/jkps.60.1625

Cite this

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title = "Control of the threshold voltage by using the oxygen partial pressure in sputter-deposited InGaZnO 4 thin-film transistors",

abstract = "We investigate the controllability of the threshold voltage (V th) by varying the O 2 partial pressure in sputter-deposited of InGaZnO 4 thin-film transistors (IGZO TFTs). We showed that the V th values could be linearly controlled from a depletion-type of V th \textasciitilde{} -6 V to an enhancement-type of V th \textasciitilde{} 2 V, without any abrupt change in μ sat, I on/off, and S, by only changing the O 2 partial pressure in a fixed region of the Ar partial pressure. Such V th controllability is thought to be due to the proper reduction of defect states and, in turn, to the preservation of high-performance TFT behavior.",

keywords = "Dc conductivity, Indium-gallium-zinc-oxide, Oxygen partial pressure, Thin-film transistors, Threshold voltage",

author = "Ahn, \{Jeung Sun\} and Lee, \{Kwang Bae\}",

note = "Funding Information: This research was supported by the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (Grant No. 2012-0001055) and partly by the Sangji University Project 2010.",

year = "2012",

month = may,

doi = "10.3938/jkps.60.1625",

language = "English",

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pages = "1625--1628",

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T1 - Control of the threshold voltage by using the oxygen partial pressure in sputter-deposited InGaZnO 4 thin-film transistors

AU - Ahn, Jeung Sun

AU - Lee, Kwang Bae

N1 - Funding Information: This research was supported by the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (Grant No. 2012-0001055) and partly by the Sangji University Project 2010.

PY - 2012/5

Y1 - 2012/5

N2 - We investigate the controllability of the threshold voltage (V th) by varying the O 2 partial pressure in sputter-deposited of InGaZnO 4 thin-film transistors (IGZO TFTs). We showed that the V th values could be linearly controlled from a depletion-type of V th ~ -6 V to an enhancement-type of V th ~ 2 V, without any abrupt change in μ sat, I on/off, and S, by only changing the O 2 partial pressure in a fixed region of the Ar partial pressure. Such V th controllability is thought to be due to the proper reduction of defect states and, in turn, to the preservation of high-performance TFT behavior.

AB - We investigate the controllability of the threshold voltage (V th) by varying the O 2 partial pressure in sputter-deposited of InGaZnO 4 thin-film transistors (IGZO TFTs). We showed that the V th values could be linearly controlled from a depletion-type of V th ~ -6 V to an enhancement-type of V th ~ 2 V, without any abrupt change in μ sat, I on/off, and S, by only changing the O 2 partial pressure in a fixed region of the Ar partial pressure. Such V th controllability is thought to be due to the proper reduction of defect states and, in turn, to the preservation of high-performance TFT behavior.

KW - Dc conductivity

KW - Indium-gallium-zinc-oxide

KW - Oxygen partial pressure

KW - Thin-film transistors

KW - Threshold voltage

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DO - 10.3938/jkps.60.1625

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