Controlled electron emission current with carbon nanotube emitters array grown with RAP process

We have developed novel growth technique for carbon nanotubes (CNTs) by using resist assisted patterned growth. The CNTs can be grown directly on the patterned catalyst surface without diffusion barrier. The growth site patterns were fabricated on Ni/Si substrate by a conventional lithography method using photo-patternable resist. The CNTs are uniformly grown on various islands, which defined by selective positioning technology. Various numbers of island-emitters were grown and measure the electron emission properties by using diode structure. The total electron emission characteristic shows very linear with number of island emitters. Emission current of the one-emitter island is 7.8 nA at 9 V/μm with 40 μm pitch, 10 μm island diameter.