Controlled growth and surface morphology evolution of m -oriented GaN faceted-domains on SiO2 -patterned m -plane sapphire substrates

Yeonwoo Seo; Chinkyo Kim

doi:10.1063/1.3488022

Controlled growth and surface morphology evolution of m -oriented GaN faceted-domains on SiO₂ -patterned m -plane sapphire substrates

Yeonwoo Seo, Chinkyo Kim

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

m -oriented GaN faceted-domains were grown on SiO₂ -patterned m -plane sapphire substrates with no low-temperature-grown buffer layers, and their surface morphology evolution was investigated. The preferred crystallographic orientations of GaN domains are found to be sensitively influenced by substrate temperature. The growth rate of m -oriented GaN faceted-domains along the c -direction is found to be significantly suppressed after filling up the circular-shaped window regions. Our simple model calculation reveals that this can be explained by the minimization of surface energy increment per volume increment, and that the growth along the c -direction is energetically not favored until the domain reaches a critical size.

Original language	English
Article number	101902
Journal	Applied Physics Letters
Volume	97
Issue number	10
DOIs	https://doi.org/10.1063/1.3488022
Publication status	Published - 6 Sept 2010

Bibliographical note

Funding Information:
This work was financially supported by National Research Foundation of Korea Grant funded by the Korean Government (Grant No. 2009-0088416) and the grant from the Industrial Source Technology Development Programs (Grant No. 2009-F014-01) of the Ministry of Knowledge Economy (MKE) of Korea.

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@article{dc461245d4b64eec84f935799b00f5de,

title = "Controlled growth and surface morphology evolution of m -oriented GaN faceted-domains on SiO2 -patterned m -plane sapphire substrates",

abstract = "m -oriented GaN faceted-domains were grown on SiO2 -patterned m -plane sapphire substrates with no low-temperature-grown buffer layers, and their surface morphology evolution was investigated. The preferred crystallographic orientations of GaN domains are found to be sensitively influenced by substrate temperature. The growth rate of m -oriented GaN faceted-domains along the c -direction is found to be significantly suppressed after filling up the circular-shaped window regions. Our simple model calculation reveals that this can be explained by the minimization of surface energy increment per volume increment, and that the growth along the c -direction is energetically not favored until the domain reaches a critical size.",

author = "Yeonwoo Seo and Chinkyo Kim",

note = "Funding Information: This work was financially supported by National Research Foundation of Korea Grant funded by the Korean Government (Grant No. 2009-0088416) and the grant from the Industrial Source Technology Development Programs (Grant No. 2009-F014-01) of the Ministry of Knowledge Economy (MKE) of Korea. ",

year = "2010",

month = sep,

day = "6",

doi = "10.1063/1.3488022",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Controlled growth and surface morphology evolution of m -oriented GaN faceted-domains on SiO2 -patterned m -plane sapphire substrates

AU - Seo, Yeonwoo

AU - Kim, Chinkyo

N1 - Funding Information: This work was financially supported by National Research Foundation of Korea Grant funded by the Korean Government (Grant No. 2009-0088416) and the grant from the Industrial Source Technology Development Programs (Grant No. 2009-F014-01) of the Ministry of Knowledge Economy (MKE) of Korea.

PY - 2010/9/6

Y1 - 2010/9/6

N2 - m -oriented GaN faceted-domains were grown on SiO2 -patterned m -plane sapphire substrates with no low-temperature-grown buffer layers, and their surface morphology evolution was investigated. The preferred crystallographic orientations of GaN domains are found to be sensitively influenced by substrate temperature. The growth rate of m -oriented GaN faceted-domains along the c -direction is found to be significantly suppressed after filling up the circular-shaped window regions. Our simple model calculation reveals that this can be explained by the minimization of surface energy increment per volume increment, and that the growth along the c -direction is energetically not favored until the domain reaches a critical size.

AB - m -oriented GaN faceted-domains were grown on SiO2 -patterned m -plane sapphire substrates with no low-temperature-grown buffer layers, and their surface morphology evolution was investigated. The preferred crystallographic orientations of GaN domains are found to be sensitively influenced by substrate temperature. The growth rate of m -oriented GaN faceted-domains along the c -direction is found to be significantly suppressed after filling up the circular-shaped window regions. Our simple model calculation reveals that this can be explained by the minimization of surface energy increment per volume increment, and that the growth along the c -direction is energetically not favored until the domain reaches a critical size.

UR - http://www.scopus.com/inward/record.url?scp=77956579727&partnerID=8YFLogxK

U2 - 10.1063/1.3488022

DO - 10.1063/1.3488022

M3 - Article

AN - SCOPUS:77956579727

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 101902

ER -

Controlled growth and surface morphology evolution of m -oriented GaN faceted-domains on SiO₂ -patterned m -plane sapphire substrates

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