Correlation between alkaline-earth-metal dopants and threshold voltage (Vth) stability of solution-processed gallium indium oxide thin film transistors

Jee Ho Park; Young Bum Yoo; Jin Young Oh; Tae Il Lee; Se Jong Lee; Hong Koo Baik

doi:10.1007/s10971-014-3560-9

Correlation between alkaline-earth-metal dopants and threshold voltage (V_th) stability of solution-processed gallium indium oxide thin film transistors

Jee Ho Park
, Young Bum Yoo
, Jin Young Oh
, Tae Il Lee
, Se Jong Lee
, Hong Koo Baik

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We examined solution-processed alkaline-earth-metal doped gallium indium oxide (GIO) thin film transistors (TFT) and studied the relationship between the dopant species and the threshold voltage (V_th) stability. As the atomic number of the dopant increases, the amount of oxygen vacancies, which act as the major defect sites, decreased and the V_th stability is enhanced. The electron trapping times and total defect sites were quantitatively calculated. Particularly, Sr-doped GIO TFT show the highest V_th stability under positive gate bias and the origin of V_th stability enhancement is deduced by using the partial charge model and reaction kinetics.

Original language	English
Pages (from-to)	260-264
Number of pages	5
Journal	Journal of Sol-Gel Science and Technology
Volume	73
Issue number	1
DOIs	https://doi.org/10.1007/s10971-014-3560-9
Publication status	Published - Jan 2014

Bibliographical note

Publisher Copyright:
© 2014, Springer Science+Business Media New York.

Keywords

Defect sites
Electron trapping times
Partial charge model
Solution-processed metal oxide thin film transistor
Threshold voltage stability

Access to Document

10.1007/s10971-014-3560-9

Cite this

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title = "Correlation between alkaline-earth-metal dopants and threshold voltage (Vth) stability of solution-processed gallium indium oxide thin film transistors",

abstract = "We examined solution-processed alkaline-earth-metal doped gallium indium oxide (GIO) thin film transistors (TFT) and studied the relationship between the dopant species and the threshold voltage (Vth) stability. As the atomic number of the dopant increases, the amount of oxygen vacancies, which act as the major defect sites, decreased and the Vth stability is enhanced. The electron trapping times and total defect sites were quantitatively calculated. Particularly, Sr-doped GIO TFT show the highest Vth stability under positive gate bias and the origin of Vth stability enhancement is deduced by using the partial charge model and reaction kinetics.",

keywords = "Defect sites, Electron trapping times, Partial charge model, Solution-processed metal oxide thin film transistor, Threshold voltage stability",

author = "Park, \{Jee Ho\} and Yoo, \{Young Bum\} and Oh, \{Jin Young\} and Lee, \{Tae Il\} and Lee, \{Se Jong\} and Baik, \{Hong Koo\}",

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AU - Park, Jee Ho

AU - Yoo, Young Bum

AU - Oh, Jin Young

AU - Lee, Tae Il

AU - Lee, Se Jong

AU - Baik, Hong Koo

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N2 - We examined solution-processed alkaline-earth-metal doped gallium indium oxide (GIO) thin film transistors (TFT) and studied the relationship between the dopant species and the threshold voltage (Vth) stability. As the atomic number of the dopant increases, the amount of oxygen vacancies, which act as the major defect sites, decreased and the Vth stability is enhanced. The electron trapping times and total defect sites were quantitatively calculated. Particularly, Sr-doped GIO TFT show the highest Vth stability under positive gate bias and the origin of Vth stability enhancement is deduced by using the partial charge model and reaction kinetics.

AB - We examined solution-processed alkaline-earth-metal doped gallium indium oxide (GIO) thin film transistors (TFT) and studied the relationship between the dopant species and the threshold voltage (Vth) stability. As the atomic number of the dopant increases, the amount of oxygen vacancies, which act as the major defect sites, decreased and the Vth stability is enhanced. The electron trapping times and total defect sites were quantitatively calculated. Particularly, Sr-doped GIO TFT show the highest Vth stability under positive gate bias and the origin of Vth stability enhancement is deduced by using the partial charge model and reaction kinetics.

KW - Defect sites

KW - Electron trapping times

KW - Partial charge model

KW - Solution-processed metal oxide thin film transistor

KW - Threshold voltage stability

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