Correlation between the type of threading dislocations and photoluminescence characteristics at different doping concentrations of Si in GaN films

Chinkyo Kim; Sungwoo Kim; Yoonho Choi; Shi Jong Leem

doi:10.1063/1.1516261

Correlation between the type of threading dislocations and photoluminescence characteristics at different doping concentrations of Si in GaN films

Chinkyo Kim, Sungwoo Kim, Yoonho Choi, Shi Jong Leem

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

At various doping concentrations of Si in GaN films, the correlation between the type of dislocations and photoluminescence (PL) characteristics was investigated. A different broadening behavior of symmetric and asymmetric Bragg peaks as a function of carrier concentration provided qualitative evidence that the type of threading dislocations generated in GaN layers was strongly dependent on the doping levels of Si. PL spectra in conjunction with x-ray rocking curve measurements suggested that the yellow luminescence associated with deep levels was more strongly related with edge dislocations than screw or mixed ones.

Original language	English
Pages (from-to)	6343-6345
Number of pages	3
Journal	Journal of Applied Physics
Volume	92
Issue number	10
DOIs	https://doi.org/10.1063/1.1516261
Publication status	Published - 15 Nov 2002

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abstract = "At various doping concentrations of Si in GaN films, the correlation between the type of dislocations and photoluminescence (PL) characteristics was investigated. A different broadening behavior of symmetric and asymmetric Bragg peaks as a function of carrier concentration provided qualitative evidence that the type of threading dislocations generated in GaN layers was strongly dependent on the doping levels of Si. PL spectra in conjunction with x-ray rocking curve measurements suggested that the yellow luminescence associated with deep levels was more strongly related with edge dislocations than screw or mixed ones.",

author = "Chinkyo Kim and Sungwoo Kim and Yoonho Choi and Leem, {Shi Jong}",

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AU - Kim, Chinkyo

AU - Kim, Sungwoo

AU - Choi, Yoonho

AU - Leem, Shi Jong

PY - 2002/11/15

Y1 - 2002/11/15

N2 - At various doping concentrations of Si in GaN films, the correlation between the type of dislocations and photoluminescence (PL) characteristics was investigated. A different broadening behavior of symmetric and asymmetric Bragg peaks as a function of carrier concentration provided qualitative evidence that the type of threading dislocations generated in GaN layers was strongly dependent on the doping levels of Si. PL spectra in conjunction with x-ray rocking curve measurements suggested that the yellow luminescence associated with deep levels was more strongly related with edge dislocations than screw or mixed ones.

AB - At various doping concentrations of Si in GaN films, the correlation between the type of dislocations and photoluminescence (PL) characteristics was investigated. A different broadening behavior of symmetric and asymmetric Bragg peaks as a function of carrier concentration provided qualitative evidence that the type of threading dislocations generated in GaN layers was strongly dependent on the doping levels of Si. PL spectra in conjunction with x-ray rocking curve measurements suggested that the yellow luminescence associated with deep levels was more strongly related with edge dislocations than screw or mixed ones.

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ER -

Correlation between the type of threading dislocations and photoluminescence characteristics at different doping concentrations of Si in GaN films

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