Creation of interface states between SiO2 and a-Si:H in a-Si:H thin film transistors by bias-stress

Sung Ki Kim; Keun Soo Lee; Jin Jang

doi:10.1016/0022-3093(95)00712-1

Creation of interface states between SiO₂ and a-Si:H in a-Si:H thin film transistors by bias-stress

Sung Ki Kim
, Keun Soo Lee
, Jin Jang

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The bias-stress effects on hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with a single-layered SiO₂ gate insulator were studied. The state density in the gap of a-Si:H for the a-Si:H TFT with N₂ plasma treated SiO₂ gate insulator is not changed by positive or negative bias-stress. On the other hand, the density of states in the gap of a-Si:H for the a-Si:H TFT with H₂ plasma treated SiO₂ gate insulator is greatly increased by positive or negative bias-stress. These experimental results demonstrate that the bulk density of a-Si:H is not changed even after long time bias-stress for the a-Si:H TFTs. The bias induced changes in a-Si:H TFTs are due to the changes in the interface state density between a-Si:H and a gate insulator.

Original language	English
Pages (from-to)	428-431
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	198-200
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(95)00712-1
Publication status	Published - May 1996

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation through the Semiconductor Physics Research Center.

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10.1016/0022-3093(95)00712-1

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title = "Creation of interface states between SiO2 and a-Si:H in a-Si:H thin film transistors by bias-stress",

abstract = "The bias-stress effects on hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with a single-layered SiO2 gate insulator were studied. The state density in the gap of a-Si:H for the a-Si:H TFT with N2 plasma treated SiO2 gate insulator is not changed by positive or negative bias-stress. On the other hand, the density of states in the gap of a-Si:H for the a-Si:H TFT with H2 plasma treated SiO2 gate insulator is greatly increased by positive or negative bias-stress. These experimental results demonstrate that the bulk density of a-Si:H is not changed even after long time bias-stress for the a-Si:H TFTs. The bias induced changes in a-Si:H TFTs are due to the changes in the interface state density between a-Si:H and a gate insulator.",

author = "Kim, \{Sung Ki\} and Lee, \{Keun Soo\} and Jin Jang",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation through the Semiconductor Physics Research Center.",

year = "1996",

month = may,

doi = "10.1016/0022-3093(95)00712-1",

language = "English",

volume = "198-200",

pages = "428--431",

journal = "Journal of Non-Crystalline Solids",

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TY - JOUR

T1 - Creation of interface states between SiO2 and a-Si:H in a-Si:H thin film transistors by bias-stress

AU - Kim, Sung Ki

AU - Lee, Keun Soo

AU - Jang, Jin

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation through the Semiconductor Physics Research Center.

PY - 1996/5

Y1 - 1996/5

N2 - The bias-stress effects on hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with a single-layered SiO2 gate insulator were studied. The state density in the gap of a-Si:H for the a-Si:H TFT with N2 plasma treated SiO2 gate insulator is not changed by positive or negative bias-stress. On the other hand, the density of states in the gap of a-Si:H for the a-Si:H TFT with H2 plasma treated SiO2 gate insulator is greatly increased by positive or negative bias-stress. These experimental results demonstrate that the bulk density of a-Si:H is not changed even after long time bias-stress for the a-Si:H TFTs. The bias induced changes in a-Si:H TFTs are due to the changes in the interface state density between a-Si:H and a gate insulator.

AB - The bias-stress effects on hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with a single-layered SiO2 gate insulator were studied. The state density in the gap of a-Si:H for the a-Si:H TFT with N2 plasma treated SiO2 gate insulator is not changed by positive or negative bias-stress. On the other hand, the density of states in the gap of a-Si:H for the a-Si:H TFT with H2 plasma treated SiO2 gate insulator is greatly increased by positive or negative bias-stress. These experimental results demonstrate that the bulk density of a-Si:H is not changed even after long time bias-stress for the a-Si:H TFTs. The bias induced changes in a-Si:H TFTs are due to the changes in the interface state density between a-Si:H and a gate insulator.

UR - https://www.scopus.com/pages/publications/0030563257

U2 - 10.1016/0022-3093(95)00712-1

DO - 10.1016/0022-3093(95)00712-1

M3 - Article

AN - SCOPUS:0030563257

SN - 0022-3093

VL - 198-200

SP - 428

EP - 431

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Creation of interface states between SiO₂ and a-Si:H in a-Si:H thin film transistors by bias-stress

Abstract

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