Abstract
In this study, we propose a novel crystallization process that is called carbon nanotube electron beam (C-beam) exposed crystallization technique. When C-beam is exposed on a-Si:H films, exposed area is crystallized to poly-Si. Poly-Si thin films has higher crystalline properties with lower hydrogen contents.
| Original language | English |
|---|---|
| Title of host publication | 21st International Display Workshops 2014, IDW 2014 |
| Publisher | Society for Information Display |
| Pages | 1235-1238 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781510827790 |
| Publication status | Published - 2014 |
| Event | 21st International Display Workshops 2014, IDW 2014 - Niigata, Japan Duration: 3 Dec 2014 → 5 Dec 2014 |
Publication series
| Name | 21st International Display Workshops 2014, IDW 2014 |
|---|---|
| Volume | 2 |
Conference
| Conference | 21st International Display Workshops 2014, IDW 2014 |
|---|---|
| Country/Territory | Japan |
| City | Niigata |
| Period | 3/12/14 → 5/12/14 |
Bibliographical note
Publisher Copyright:© 2014 . Society for Information Display. All rights reserved.
Keywords
- CNT emitters
- Crystallization
- Field emission
- Poly-Si thin films