Crystallized thin film using the carbon nanotube electron beam (C-Beam ) for high performance thin film transistor

Carbon nanotube (CNT) emitters grown by RAP process is used for the source of electron to crystallize an amorphous silicon thin films with novel exposure technique. In this study, we developed carbon nanotube electron beam (C-beam) exposure technique and the C-beam crystallized silicon thin films. As a source of electron, the CNT emitters are placed at cathode. Through the gate mesh electrons generated and high accelerated electrons impact thin film at the anode plate in triode system. We confirm the high crystallinity of silicon thin films through Raman spectroscopy. The grain size distribution of silicon thin films is about 10 nm as a result from SEM measurement. We expect that this film will be a good replacement as a new active layer of next generation thin film transistors (TFTs).