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Design of SiO2/4H-SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing

  • Tae Hyeon Kil
  • , Takuma Kobayashi
  • , Takayoshi Shimura
  • , Heiji Watanabe

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

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