Design of thin microwave absorbers using capacitive screen

Jun Ho Lee; Bomson Lee

doi:10.1109/IWAT.2015.7365373

Design of thin microwave absorbers using capacitive screen

Jun Ho Lee
, Bomson Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

A microwave absorber with a layer depth less than a quarter wavelength is investigated based on an equivalent circuit. For a specific absorber with a given layer electrical length, the equivalent resistance and capacitance of a capacitive screen can be determined using the presented closed-form design equations. The relation between the layer depth and absorption bandwidth is also analyzed. The presented formulation is validated by a design example in the ISM band. A unit of the absorber screen is realized using a resistive rectangular structure with surrounding gaps. The absorber is shown to offer a 90% absorption bandwidth from 2.3GHz to 5.1GHz (93%) with layer depth of 1/8 wavelength.

Original language	English
Title of host publication	2015 International Workshop on Antenna Technology, iWAT 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	199-201
Number of pages	3
ISBN (Electronic)	9781479977178
DOIs	https://doi.org/10.1109/IWAT.2015.7365373
Publication status	Published - 23 Dec 2015
Event	International Workshop on Antenna Technology, iWAT 2015 - Seoul, Korea, Republic of Duration: 4 Mar 2015 → 6 Mar 2015

Publication series

Name	2015 International Workshop on Antenna Technology, iWAT 2015

Conference

Conference	International Workshop on Antenna Technology, iWAT 2015
Country/Territory	Korea, Republic of
City	Seoul
Period	4/03/15 → 6/03/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

Absorption bandwidth
Capacitive screen
Design equations
Resistive sheet
Thin absorber

Access to Document

10.1109/IWAT.2015.7365373

Cite this

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title = "Design of thin microwave absorbers using capacitive screen",

abstract = "A microwave absorber with a layer depth less than a quarter wavelength is investigated based on an equivalent circuit. For a specific absorber with a given layer electrical length, the equivalent resistance and capacitance of a capacitive screen can be determined using the presented closed-form design equations. The relation between the layer depth and absorption bandwidth is also analyzed. The presented formulation is validated by a design example in the ISM band. A unit of the absorber screen is realized using a resistive rectangular structure with surrounding gaps. The absorber is shown to offer a 90\% absorption bandwidth from 2.3GHz to 5.1GHz (93\%) with layer depth of 1/8 wavelength.",

keywords = "Absorption bandwidth, Capacitive screen, Design equations, Resistive sheet, Thin absorber",

author = "Lee, \{Jun Ho\} and Bomson Lee",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; International Workshop on Antenna Technology, iWAT 2015 ; Conference date: 04-03-2015 Through 06-03-2015",

year = "2015",

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day = "23",

doi = "10.1109/IWAT.2015.7365373",

language = "English",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Lee, JH & Lee, B 2015, Design of thin microwave absorbers using capacitive screen. in 2015 International Workshop on Antenna Technology, iWAT 2015., 7365373, 2015 International Workshop on Antenna Technology, iWAT 2015, Institute of Electrical and Electronics Engineers Inc., pp. 199-201, International Workshop on Antenna Technology, iWAT 2015, Seoul, Korea, Republic of, 4/03/15. https://doi.org/10.1109/IWAT.2015.7365373

Design of thin microwave absorbers using capacitive screen. / Lee, Jun Ho; Lee, Bomson.
2015 International Workshop on Antenna Technology, iWAT 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 199-201 7365373 (2015 International Workshop on Antenna Technology, iWAT 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Design of thin microwave absorbers using capacitive screen

AU - Lee, Jun Ho

AU - Lee, Bomson

PY - 2015/12/23

Y1 - 2015/12/23

N2 - A microwave absorber with a layer depth less than a quarter wavelength is investigated based on an equivalent circuit. For a specific absorber with a given layer electrical length, the equivalent resistance and capacitance of a capacitive screen can be determined using the presented closed-form design equations. The relation between the layer depth and absorption bandwidth is also analyzed. The presented formulation is validated by a design example in the ISM band. A unit of the absorber screen is realized using a resistive rectangular structure with surrounding gaps. The absorber is shown to offer a 90% absorption bandwidth from 2.3GHz to 5.1GHz (93%) with layer depth of 1/8 wavelength.

AB - A microwave absorber with a layer depth less than a quarter wavelength is investigated based on an equivalent circuit. For a specific absorber with a given layer electrical length, the equivalent resistance and capacitance of a capacitive screen can be determined using the presented closed-form design equations. The relation between the layer depth and absorption bandwidth is also analyzed. The presented formulation is validated by a design example in the ISM band. A unit of the absorber screen is realized using a resistive rectangular structure with surrounding gaps. The absorber is shown to offer a 90% absorption bandwidth from 2.3GHz to 5.1GHz (93%) with layer depth of 1/8 wavelength.

KW - Absorption bandwidth

KW - Capacitive screen

KW - Design equations

KW - Resistive sheet

KW - Thin absorber

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DO - 10.1109/IWAT.2015.7365373

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SP - 199

EP - 201

BT - 2015 International Workshop on Antenna Technology, iWAT 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Workshop on Antenna Technology, iWAT 2015

Y2 - 4 March 2015 through 6 March 2015

ER -

Design of thin microwave absorbers using capacitive screen

Abstract

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Conference

Bibliographical note

Keywords

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