Device characteristics of index-guided InxGa1-xN/InyGa/sub 1-y/N MQW laser diodes grown by low-pressure metal organic chemical vapor deposition

Chinkyo Kim, Min Yang, Jaehyung Yi, Sungwoo Kim, Yoonho Choi, Tae Kyung Yoo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Summary form only given. Device characteristics of index-guided InxGa1-xN/InyGa/sub 1-y/N MQW laser diodes were investigated in terms of ridge depth and etching conditions. We report room temperature pulsed operation of InxGa1-xN/InyGa/sub 1-y/N multiple quantum well (MQW) laser diodes with optimized ridge depth.

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages292-293
Number of pages2
ISBN (Electronic)0780356616, 9780780356610
DOIs
Publication statusPublished - 1999
Event1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999 - Seoul, Korea, Republic of
Duration: 30 Aug 19993 Sept 1999

Publication series

NameCLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
Volume2

Conference

Conference1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999
Country/TerritoryKorea, Republic of
CitySeoul
Period30/08/993/09/99

Bibliographical note

Publisher Copyright:
© 1999 IEEE.

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