Dielectric Functions and Critical Points of GaAsSb Alloys

Tae Jung Kim; Han Gyeol Park; Jun Seok Byun; Van Long Le; Hoang Tung Nguyen; Xuan Au Nguyen; Young Dong Kim; Jin Dong Song; David E. Aspnes

doi:10.3938/jkps.74.595

Dielectric Functions and Critical Points of GaAsSb Alloys

Tae Jung Kim, Han Gyeol Park, Jun Seok Byun, Van Long Le, Hoang Tung Nguyen, Xuan Au Nguyen, Young Dong Kim, Jin Dong Song, David E. Aspnes

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report the pseudodielectric functions and the critical points of GaAs _x Sb _1−x ternary alloy films. Data were obtained by performing spectroscopic ellipsometry on 1-μm-thick films grown on (001) GaAs by using molecular beam epitaxy. Artifacts from surface contaminants, including oxide overlayers, were minimized by using in-situ chemical cleaning, leading to accurate representations of the bulk dielectric responses of these materials. We determined the energies of the E ₁ , E ₁ +Δ ₁ , E′ ₀ , E′ ₀ +Δ′ ₀ , E ₂ , E′ ₂ , and E′ ₁ critical points from numerically calculated second energy derivatives, as well as their compositional dependences by using lineshape fitting.

Original language	English
Pages (from-to)	595-599
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	74
Issue number	6
DOIs	https://doi.org/10.3938/jkps.74.595
Publication status	Published - 1 Mar 2019

Bibliographical note

Publisher Copyright:
© 2019, The Korean Physical Society.

Keywords

Critical point
Dielectric function
Ellipsometry
GaAsSb

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10.3938/jkps.74.595

Cite this

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title = "Dielectric Functions and Critical Points of GaAsSb Alloys",

abstract = " We report the pseudodielectric functions and the critical points of GaAs x Sb 1−x ternary alloy films. Data were obtained by performing spectroscopic ellipsometry on 1-μm-thick films grown on (001) GaAs by using molecular beam epitaxy. Artifacts from surface contaminants, including oxide overlayers, were minimized by using in-situ chemical cleaning, leading to accurate representations of the bulk dielectric responses of these materials. We determined the energies of the E 1 , E 1 +Δ 1 , E′ 0 , E′ 0 +Δ′ 0 , E 2 , E′ 2 , and E′ 1 critical points from numerically calculated second energy derivatives, as well as their compositional dependences by using lineshape fitting.",

keywords = "Critical point, Dielectric function, Ellipsometry, GaAsSb",

author = "Kim, {Tae Jung} and Park, {Han Gyeol} and Byun, {Jun Seok} and Le, {Van Long} and Nguyen, {Hoang Tung} and Nguyen, {Xuan Au} and Kim, {Young Dong} and Song, {Jin Dong} and Aspnes, {David E.}",

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T1 - Dielectric Functions and Critical Points of GaAsSb Alloys

AU - Kim, Tae Jung

AU - Park, Han Gyeol

AU - Byun, Jun Seok

AU - Le, Van Long

AU - Nguyen, Hoang Tung

AU - Nguyen, Xuan Au

AU - Kim, Young Dong

AU - Song, Jin Dong

AU - Aspnes, David E.

PY - 2019/3/1

Y1 - 2019/3/1

N2 - We report the pseudodielectric functions and the critical points of GaAs x Sb 1−x ternary alloy films. Data were obtained by performing spectroscopic ellipsometry on 1-μm-thick films grown on (001) GaAs by using molecular beam epitaxy. Artifacts from surface contaminants, including oxide overlayers, were minimized by using in-situ chemical cleaning, leading to accurate representations of the bulk dielectric responses of these materials. We determined the energies of the E 1 , E 1 +Δ 1 , E′ 0 , E′ 0 +Δ′ 0 , E 2 , E′ 2 , and E′ 1 critical points from numerically calculated second energy derivatives, as well as their compositional dependences by using lineshape fitting.

AB - We report the pseudodielectric functions and the critical points of GaAs x Sb 1−x ternary alloy films. Data were obtained by performing spectroscopic ellipsometry on 1-μm-thick films grown on (001) GaAs by using molecular beam epitaxy. Artifacts from surface contaminants, including oxide overlayers, were minimized by using in-situ chemical cleaning, leading to accurate representations of the bulk dielectric responses of these materials. We determined the energies of the E 1 , E 1 +Δ 1 , E′ 0 , E′ 0 +Δ′ 0 , E 2 , E′ 2 , and E′ 1 critical points from numerically calculated second energy derivatives, as well as their compositional dependences by using lineshape fitting.

KW - Critical point

KW - Dielectric function

KW - Ellipsometry

KW - GaAsSb

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DO - 10.3938/jkps.74.595

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JO - Journal of the Korean Physical Society

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Dielectric Functions and Critical Points of GaAsSb Alloys

Abstract

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Keywords

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