Dielectric functions and interband transitions of In1-xAl x Sb alloys

J. J. Yoon; T. J. Kim; Y. W. Jung; D. E. Aspnes; Y. D. Kim; H. J. Kim; Y. C. Chang; S. H. Shin; J. D. Song

doi:10.1063/1.3488827

Dielectric functions and interband transitions of In_1-xAl _x Sb alloys

J. J. Yoon
, T. J. Kim
, Y. W. Jung
, D. E. Aspnes
, Y. D. Kim
, H. J. Kim
, Y. C. Chang
, S. H. Shin
, J. D. Song

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Pseudodielectric functions 〈ε〉 of In_1-xAl _x Sb ternary alloy films were determined from 1.5 to 6.0 eV by spectroscopic ellipsometry. Overlayer effects were minimized by performing in situ chemical etching to more accurately determine intrinsic bulk dielectric responses. Critical-point (CP) energies of structures were determined from numerically calculated second energy derivatives. Where necessary, Brillouin-zone origins were identified by electronic band structure calculations done with the linear augmented Slater-type orbital method. These calculations also showed increasing separation of the E₂ and E_2′ CP structures with increasing Al-composition

Original language	English
Article number	111902
Journal	Applied Physics Letters
Volume	97
Issue number	11
DOIs	https://doi.org/10.1063/1.3488827
Publication status	Published - 13 Sept 2010

Bibliographical note

Funding Information:
This work was supported by National Research Laboratory through the MEST (Grant No. 2010-008026) and also by World Class University Program (MEST Grant No. R33-2009-000-10118-0). Y.C.C. was supported by Grant No. NSC-98-2112-M-001-022-MY3, Republic of China. J.D.S. acknowledges the support from the KIST Institutional Program of Spintronics and the NRF Korea grant funded by the MEST (Grant No. 2010-001745).

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@article{746ea5dc83a4426fad582e32933f676a,

title = "Dielectric functions and interband transitions of In1-xAl x Sb alloys",

abstract = "Pseudodielectric functions 〈ε〉 of In1-xAl x Sb ternary alloy films were determined from 1.5 to 6.0 eV by spectroscopic ellipsometry. Overlayer effects were minimized by performing in situ chemical etching to more accurately determine intrinsic bulk dielectric responses. Critical-point (CP) energies of structures were determined from numerically calculated second energy derivatives. Where necessary, Brillouin-zone origins were identified by electronic band structure calculations done with the linear augmented Slater-type orbital method. These calculations also showed increasing separation of the E2 and E2′ CP structures with increasing Al-composition",

author = "Yoon, \{J. J.\} and Kim, \{T. J.\} and Jung, \{Y. W.\} and Aspnes, \{D. E.\} and Kim, \{Y. D.\} and Kim, \{H. J.\} and Chang, \{Y. C.\} and Shin, \{S. H.\} and Song, \{J. D.\}",

note = "Funding Information: This work was supported by National Research Laboratory through the MEST (Grant No. 2010-008026) and also by World Class University Program (MEST Grant No. R33-2009-000-10118-0). Y.C.C. was supported by Grant No. NSC-98-2112-M-001-022-MY3, Republic of China. J.D.S. acknowledges the support from the KIST Institutional Program of Spintronics and the NRF Korea grant funded by the MEST (Grant No. 2010-001745).",

year = "2010",

month = sep,

day = "13",

doi = "10.1063/1.3488827",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

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TY - JOUR

T1 - Dielectric functions and interband transitions of In1-xAl x Sb alloys

AU - Yoon, J. J.

AU - Kim, T. J.

AU - Jung, Y. W.

AU - Aspnes, D. E.

AU - Kim, Y. D.

AU - Kim, H. J.

AU - Chang, Y. C.

AU - Shin, S. H.

AU - Song, J. D.

N1 - Funding Information: This work was supported by National Research Laboratory through the MEST (Grant No. 2010-008026) and also by World Class University Program (MEST Grant No. R33-2009-000-10118-0). Y.C.C. was supported by Grant No. NSC-98-2112-M-001-022-MY3, Republic of China. J.D.S. acknowledges the support from the KIST Institutional Program of Spintronics and the NRF Korea grant funded by the MEST (Grant No. 2010-001745).

PY - 2010/9/13

Y1 - 2010/9/13

N2 - Pseudodielectric functions 〈ε〉 of In1-xAl x Sb ternary alloy films were determined from 1.5 to 6.0 eV by spectroscopic ellipsometry. Overlayer effects were minimized by performing in situ chemical etching to more accurately determine intrinsic bulk dielectric responses. Critical-point (CP) energies of structures were determined from numerically calculated second energy derivatives. Where necessary, Brillouin-zone origins were identified by electronic band structure calculations done with the linear augmented Slater-type orbital method. These calculations also showed increasing separation of the E2 and E2′ CP structures with increasing Al-composition

AB - Pseudodielectric functions 〈ε〉 of In1-xAl x Sb ternary alloy films were determined from 1.5 to 6.0 eV by spectroscopic ellipsometry. Overlayer effects were minimized by performing in situ chemical etching to more accurately determine intrinsic bulk dielectric responses. Critical-point (CP) energies of structures were determined from numerically calculated second energy derivatives. Where necessary, Brillouin-zone origins were identified by electronic band structure calculations done with the linear augmented Slater-type orbital method. These calculations also showed increasing separation of the E2 and E2′ CP structures with increasing Al-composition

UR - https://www.scopus.com/pages/publications/77956867111

U2 - 10.1063/1.3488827

DO - 10.1063/1.3488827

M3 - Article

AN - SCOPUS:77956867111

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111902

ER -

Dielectric functions and interband transitions of In_1-xAl _x Sb alloys

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