Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters

S. G. Choi, D. E. Aspnes, N. A. Stoute, Y. D. Kim, H. J. Kim, Y. C. Chang, C. J. Palmstrøm

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Spectroscopic ellipsometry is used to determine pseudodielectric function spectra 〈ε〉 = 〈ε 1〈+i〈ε 2〈 of InAs xP I-x al-loy thin films from 1.5 to 6.0 eV at room temperature. The structures for the E 1, E 1 + Δ 1, E′ 0, and E′ 2 critical points (CPs) were observed in the data. We compare direct- and reciprocal-space methods of extracting CP energies E g. The direct-space values show less uncertainty, a result of how the two procedures use available information. Energies obtained are compared with the results of theoretical calculations using the linear augmented Slater-type orbital (LASTO) method.

Original languageEnglish
Pages (from-to)884-887
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume205
Issue number4
DOIs
Publication statusPublished - Apr 2008

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