Dip-pen lithography of ferroelectric PbTiO3 nanodots

Yeog Son Jong; Young Han Shin; Ryu Sangwoo; Kim Hyungjun; Hyun M. Jang

doi:10.1021/ja906871b

Dip-pen lithography of ferroelectric PbTiO₃ nanodots

Yeog Son Jong
, Young Han Shin
, Ryu Sangwoo
, Kim Hyungjun
, Hyun M. Jang

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

(Figure Presented) Dip-pen nanolithography of ferroelectric PTO nanodots is described. This position-controlled dip-pen nanolithography using a silicon nitride cantilever produced an array of ferroelectric nanodots with a minimum lateral dimension of ∼37 nm on a Nb-doped SrTiO₃ substrate. This minimum-sized PTO dot is characterized by single-domain epitaxial growth with an enhanced tetragonality (c/a ratio) of 1.08.

Original language	English
Pages (from-to)	14676-14678
Number of pages	3
Journal	Journal of the American Chemical Society
Volume	131
Issue number	41
DOIs	https://doi.org/10.1021/ja906871b
Publication status	Published - 21 Oct 2009

Access to Document

10.1021/ja906871b

Cite this

@article{db626487ea3246a085bee95d4b7b7e3a,

title = "Dip-pen lithography of ferroelectric PbTiO3 nanodots",

abstract = "(Figure Presented) Dip-pen nanolithography of ferroelectric PTO nanodots is described. This position-controlled dip-pen nanolithography using a silicon nitride cantilever produced an array of ferroelectric nanodots with a minimum lateral dimension of ∼37 nm on a Nb-doped SrTiO3 substrate. This minimum-sized PTO dot is characterized by single-domain epitaxial growth with an enhanced tetragonality (c/a ratio) of 1.08.",

author = "Jong, \{Yeog Son\} and Shin, \{Young Han\} and Ryu Sangwoo and Kim Hyungjun and Jang, \{Hyun M.\}",

year = "2009",

month = oct,

day = "21",

doi = "10.1021/ja906871b",

language = "English",

volume = "131",

pages = "14676--14678",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society",

number = "41",

}

TY - JOUR

T1 - Dip-pen lithography of ferroelectric PbTiO3 nanodots

AU - Jong, Yeog Son

AU - Shin, Young Han

AU - Sangwoo, Ryu

AU - Hyungjun, Kim

AU - Jang, Hyun M.

PY - 2009/10/21

Y1 - 2009/10/21

N2 - (Figure Presented) Dip-pen nanolithography of ferroelectric PTO nanodots is described. This position-controlled dip-pen nanolithography using a silicon nitride cantilever produced an array of ferroelectric nanodots with a minimum lateral dimension of ∼37 nm on a Nb-doped SrTiO3 substrate. This minimum-sized PTO dot is characterized by single-domain epitaxial growth with an enhanced tetragonality (c/a ratio) of 1.08.

AB - (Figure Presented) Dip-pen nanolithography of ferroelectric PTO nanodots is described. This position-controlled dip-pen nanolithography using a silicon nitride cantilever produced an array of ferroelectric nanodots with a minimum lateral dimension of ∼37 nm on a Nb-doped SrTiO3 substrate. This minimum-sized PTO dot is characterized by single-domain epitaxial growth with an enhanced tetragonality (c/a ratio) of 1.08.

UR - https://www.scopus.com/pages/publications/70350048588

U2 - 10.1021/ja906871b

DO - 10.1021/ja906871b

M3 - Article

C2 - 19824727

AN - SCOPUS:70350048588

SN - 0002-7863

VL - 131

SP - 14676

EP - 14678

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 41

ER -

Dip-pen lithography of ferroelectric PbTiO₃ nanodots

Abstract

Access to Document

Other files and links

Fingerprint

Cite this