Direct observation of conducting filaments on resistive switching of NiO thin films

J. Y. Son; Y. H. Shin

doi:10.1063/1.2931087

Direct observation of conducting filaments on resistive switching of NiO thin films

J. Y. Son, Y. H. Shin

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Abstract

The HgNiOPt capacitor with a Hg top electrode diameter of about 35 μm showed the typical bistable resistive switching characteristic. After the removal of the Hg top electrode, we directly observed the formation and removal of filaments for a high resistive state (R_off) and a low resistive state (R_on) by conducting atomic force microscope (CAFM). CAFM images for R_off and R_on states directly exhibit evidence of the formation and removal of filaments on the surface, which supports well the filament model as a switching mechanism of resistive random access memory.

Original language	English
Article number	222106
Journal	Applied Physics Letters
Volume	92
Issue number	22
DOIs	https://doi.org/10.1063/1.2931087
Publication status	Published - 2008

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Copyright 2008 Elsevier B.V., All rights reserved.

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abstract = "The HgNiOPt capacitor with a Hg top electrode diameter of about 35 μm showed the typical bistable resistive switching characteristic. After the removal of the Hg top electrode, we directly observed the formation and removal of filaments for a high resistive state (Roff) and a low resistive state (Ron) by conducting atomic force microscope (CAFM). CAFM images for Roff and Ron states directly exhibit evidence of the formation and removal of filaments on the surface, which supports well the filament model as a switching mechanism of resistive random access memory.",

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AB - The HgNiOPt capacitor with a Hg top electrode diameter of about 35 μm showed the typical bistable resistive switching characteristic. After the removal of the Hg top electrode, we directly observed the formation and removal of filaments for a high resistive state (Roff) and a low resistive state (Ron) by conducting atomic force microscope (CAFM). CAFM images for Roff and Ron states directly exhibit evidence of the formation and removal of filaments on the surface, which supports well the filament model as a switching mechanism of resistive random access memory.

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Direct observation of conducting filaments on resistive switching of NiO thin films

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