@inproceedings{1bfd8581772d4fdb855e241a8d34d6df,
title = "Disturb-free ferroelectric nonvolatile memory cell for oxide TFT-based low-power display panels",
abstract = "A nonvolatile ferroelectric random access memory cell was proposed for the power reduction of display panel, which was designed to be composed of two In-Ga-Zn-O (IGZO) thin-film-transistors (TFTs) and a ferroelectric memory TFT (feTFT) (2T/1FT). Amorphous IGZO and poly (vinylidene fluoride- trifluoroethylene) [P(VDF-TrFE)] were employed as semiconducting channels for both TFTs and a gate insulator for feFET, respectively. All the fabrication processes were performed below 200 °C on the glass substrate [1-2]. The fabricated 2T/1FT memory cell successfully demonstrated the write/readout and disturb-free operations.",
keywords = "Ferroelectric memory TFT, Nonvolatile memory cell, Oxide TFT",
author = "Kim, \{Byeong Hoon\} and Byun, \{Chun Won\} and Yang, \{Shin Hyuk\} and Jung, \{Soon Won\} and Ryu, \{Min Ki\} and Park, \{Sang Hee Ko\} and Hwang, \{Chi Sun\} and Cho, \{Kyoung Ik\} and Kwon, \{Oh Sang\} and Park, \{Eun Suk\} and Kim, \{Kyoung Hwan\} and Park, \{Kee Chan\} and Yoon, \{Sung Min\}",
note = "Copyright: Copyright 2011 Elsevier B.V., All rights reserved.; 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 ; Conference date: 11-10-2010 Through 15-10-2010",
year = "2010",
language = "English",
isbn = "9781617827020",
series = "Proceedings of International Meeting on Information Display",
pages = "70--71",
booktitle = "10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010",
}