Abstract
We investigated the growth and ferroelectric properties of PbTiO3 (PTO) thin films deposited on a highly oriented pyrolytic graphite substrate with an atomic structure similar to a graphene surface. Polycrystalline PTO thin films with good crystallinity were formed using a pulsed laser deposition method, as confirmed by X-ray experiments. The polycrystalline PTO thin films exhibited excellent ferroelectric properties, with a high remanent polarization of 38.5 μC/cm2 and a remanent piezoelectric constant of approximately 40 pm/V. Piezoresponse force microscopy revealed the mosaic domain structure of the PTO thin films, which had a slightly lower domain wall energy compared to epitaxial PTO thin films. Moreover, atomic force microscopy allowed the observation of the current domain structure corresponding to the ferroelectric domain structure, with higher currents formed in the domain walls and decreased upon the removal of the domain walls.
Original language | English |
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Pages (from-to) | 132-138 |
Number of pages | 7 |
Journal | Journal of the Korean Ceramic Society |
Volume | 62 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 2025 |
Bibliographical note
Publisher Copyright:© The Korean Ceramic Society 2024.
Keywords
- Domain wall conduction
- Ferroelectric domain structures
- Highly oriented pyrolytic graphite (HOPG) substrate
- PbTiO thin films