Effect of AC and DC gate bias-stress on the performance of a-IGZO TFTs on plastic substrate

Mallory Mativegna, Min Hyuk Choi, Jae Won Choi, Jin Jang

Research output: Contribution to conferencePaperpeer-review

Abstract

The effect of AC and DC gate bias stress is investigated in a-IGZO TFTs on polyimide. For the same effective stress time, AC induces a smaller positive ΔVth compared to DC Stress, indicating trapping as the main degradation mechanism. The time dependence of ΔVth thus follows the stretched exponential equation.

Original languageEnglish
Pages455-458
Number of pages4
Publication statusPublished - 2010
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: 1 Dec 20103 Dec 2010

Conference

Conference17th International Display Workshops, IDW'10
Country/TerritoryJapan
CityFukuoka
Period1/12/103/12/10

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