Effect of Al concentration on the structural, electrical, and optical properties of transparent Al-doped ZnO

Chang Oh Kim; Dong Hee Shin; Sung Kim; Suk Ho Choi

doi:10.3938/jkps.61.599

Effect of Al concentration on the structural, electrical, and optical properties of transparent Al-doped ZnO

Chang Oh Kim, Dong Hee Shin, Sung Kim, Suk Ho Choi

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Al-doped ZnO (AZO) films have been deposited on sapphire substrates at 400 °C for various Al doping concentrations (n _Al) from 0 to 5 wt.% by RF magnetron sputtering and were subsequently annealed at 600 ~ 800 °C for 3 min. The AZO films show the best structural, electrical, and optical properties at n _Al = ~2 wt.%, as demonstrated by Hall-effect, photoluminescence, X-ray diffraction, and optical transparency measurements. The n _Al-dependent experimental results are discussed based on possible physical mechanisms. These studies provide a simple method of controlling n _Al for optimizing the properties of AZO films for use as transparent conductive oxides.

Original language	English
Pages (from-to)	599-602
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	61
Issue number	4
DOIs	https://doi.org/10.3938/jkps.61.599
Publication status	Published - Aug 2012

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government, Ministry of Education, Science and Technology (MEST, No. 2011-0017373).

Keywords

Al
Doping concentration
Sputtering
Ttransparent conductive oxide
ZnO

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abstract = "Al-doped ZnO (AZO) films have been deposited on sapphire substrates at 400 °C for various Al doping concentrations (n Al) from 0 to 5 wt.% by RF magnetron sputtering and were subsequently annealed at 600 ~ 800 °C for 3 min. The AZO films show the best structural, electrical, and optical properties at n Al = ~2 wt.%, as demonstrated by Hall-effect, photoluminescence, X-ray diffraction, and optical transparency measurements. The n Al-dependent experimental results are discussed based on possible physical mechanisms. These studies provide a simple method of controlling n Al for optimizing the properties of AZO films for use as transparent conductive oxides.",

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AU - Kim, Chang Oh

AU - Shin, Dong Hee

AU - Kim, Sung

AU - Choi, Suk Ho

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government, Ministry of Education, Science and Technology (MEST, No. 2011-0017373).

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AB - Al-doped ZnO (AZO) films have been deposited on sapphire substrates at 400 °C for various Al doping concentrations (n Al) from 0 to 5 wt.% by RF magnetron sputtering and were subsequently annealed at 600 ~ 800 °C for 3 min. The AZO films show the best structural, electrical, and optical properties at n Al = ~2 wt.%, as demonstrated by Hall-effect, photoluminescence, X-ray diffraction, and optical transparency measurements. The n Al-dependent experimental results are discussed based on possible physical mechanisms. These studies provide a simple method of controlling n Al for optimizing the properties of AZO films for use as transparent conductive oxides.

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Effect of Al concentration on the structural, electrical, and optical properties of transparent Al-doped ZnO

Abstract

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Keywords

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