Abstract
The impact of anode buffer layers (ABLs) on the performance of CdSe quantum-dot light-emitting diodes (QLED) with a ZnO nanoparticle (NP) electron-transport layer and 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) hole-transport layer was studied. Either MoO3 or 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) was used as the ABL. The QLED with a HAT-CN ABL exhibited better luminance performance, while the ultraviolet photoelectron spectroscopy and hole-only devices indicated that MoO3 was a superior hole injector. These results suggest that the QLED with a MoO3 ABL suffered from a severe charge carrier imbalance. Therefore, electron injection through the ZnO NP layer must be improved to further enhance the QLED performance.
Original language | English |
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Article number | 012103 |
Journal | Applied Physics Express |
Volume | 9 |
Issue number | 1 |
DOIs | |
Publication status | Published - Jan 2016 |
Bibliographical note
Publisher Copyright:© 2016 The Japan Society of Applied Physics.