Effect of anode buffer layer on the efficiency of inverted quantum-dot light-emitting diodes

Ye Ram Cho, Pil Gu Kang, Dong Heon Shin, Ji Hoon Kim, Min Jae Maeng, Jeonghun Sakong, Jong Am Hong, Yongsup Park, Min Chul Suh

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

The impact of anode buffer layers (ABLs) on the performance of CdSe quantum-dot light-emitting diodes (QLED) with a ZnO nanoparticle (NP) electron-transport layer and 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine] (TAPC) hole-transport layer was studied. Either MoO3 or 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) was used as the ABL. The QLED with a HAT-CN ABL exhibited better luminance performance, while the ultraviolet photoelectron spectroscopy and hole-only devices indicated that MoO3 was a superior hole injector. These results suggest that the QLED with a MoO3 ABL suffered from a severe charge carrier imbalance. Therefore, electron injection through the ZnO NP layer must be improved to further enhance the QLED performance.

Original languageEnglish
Article number012103
JournalApplied Physics Express
Volume9
Issue number1
DOIs
Publication statusPublished - Jan 2016

Bibliographical note

Publisher Copyright:
© 2016 The Japan Society of Applied Physics.

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