Effect of Doping Fluorine in Offset Region on Performance of Coplanar a-IGZO TFTs

Abidur Rahaman; Mohammad Masum Billah; Jae Gwang Um; Md Mehedi Hasan; Jin Jang

doi:10.1109/LED.2018.2856760

Effect of Doping Fluorine in Offset Region on Performance of Coplanar a-IGZO TFTs

Abidur Rahaman, Mohammad Masum Billah, Jae Gwang Um, Md Mehedi Hasan, Jin Jang

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

We report the effect of doping fluorine in the offset region on the performance of coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The TFTs with 4-μm offset length at both sides of the gate were fabricated. Hall mobility of the offset region a-IGZO increases, and its resistivity (p) decreases with increasing F doping concentration. The TFTs with 7 × 10¹⁹ cm^?3 carrier concentration in the offset region exhibit the field-effect mobility of 27.17 cm²/V s. The fabricated 23-stage ring oscillator (RO) shows an oscillation frequency of 2.27 MHz at the supply voltage of 20 V with a propagation delay of 9.5 ns/stage, which is the lowest value for the oxide TFT ROs ever reported.

Original language	English
Article number	8412211
Pages (from-to)	1318-1321
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	9
DOIs	https://doi.org/10.1109/LED.2018.2856760
Publication status	Published - Sept 2018

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Coplanar a-IGZO TFTs
Ring oscillator (RO)
SPICE
TCAD
offset fluorination

Access to Document

10.1109/LED.2018.2856760

Cite this

@article{dd0363211804432db92b5e467c4a9786,

title = "Effect of Doping Fluorine in Offset Region on Performance of Coplanar a-IGZO TFTs",

abstract = "We report the effect of doping fluorine in the offset region on the performance of coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The TFTs with 4-μm offset length at both sides of the gate were fabricated. Hall mobility of the offset region a-IGZO increases, and its resistivity (p) decreases with increasing F doping concentration. The TFTs with 7 × 1019 cm?3 carrier concentration in the offset region exhibit the field-effect mobility of 27.17 cm2/V s. The fabricated 23-stage ring oscillator (RO) shows an oscillation frequency of 2.27 MHz at the supply voltage of 20 V with a propagation delay of 9.5 ns/stage, which is the lowest value for the oxide TFT ROs ever reported.",

keywords = "Coplanar a-IGZO TFTs, Ring oscillator (RO), SPICE, TCAD, offset fluorination",

author = "Abidur Rahaman and Billah, {Mohammad Masum} and Um, {Jae Gwang} and Hasan, {Md Mehedi} and Jin Jang",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2018",

month = sep,

doi = "10.1109/LED.2018.2856760",

language = "English",

volume = "39",

pages = "1318--1321",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Effect of Doping Fluorine in Offset Region on Performance of Coplanar a-IGZO TFTs

AU - Rahaman, Abidur

AU - Billah, Mohammad Masum

AU - Um, Jae Gwang

AU - Hasan, Md Mehedi

AU - Jang, Jin

PY - 2018/9

Y1 - 2018/9

N2 - We report the effect of doping fluorine in the offset region on the performance of coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The TFTs with 4-μm offset length at both sides of the gate were fabricated. Hall mobility of the offset region a-IGZO increases, and its resistivity (p) decreases with increasing F doping concentration. The TFTs with 7 × 1019 cm?3 carrier concentration in the offset region exhibit the field-effect mobility of 27.17 cm2/V s. The fabricated 23-stage ring oscillator (RO) shows an oscillation frequency of 2.27 MHz at the supply voltage of 20 V with a propagation delay of 9.5 ns/stage, which is the lowest value for the oxide TFT ROs ever reported.

AB - We report the effect of doping fluorine in the offset region on the performance of coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The TFTs with 4-μm offset length at both sides of the gate were fabricated. Hall mobility of the offset region a-IGZO increases, and its resistivity (p) decreases with increasing F doping concentration. The TFTs with 7 × 1019 cm?3 carrier concentration in the offset region exhibit the field-effect mobility of 27.17 cm2/V s. The fabricated 23-stage ring oscillator (RO) shows an oscillation frequency of 2.27 MHz at the supply voltage of 20 V with a propagation delay of 9.5 ns/stage, which is the lowest value for the oxide TFT ROs ever reported.

KW - Coplanar a-IGZO TFTs

KW - Ring oscillator (RO)

KW - SPICE

KW - TCAD

KW - offset fluorination

UR - http://www.scopus.com/inward/record.url?scp=85050234150&partnerID=8YFLogxK

U2 - 10.1109/LED.2018.2856760

DO - 10.1109/LED.2018.2856760

M3 - Article

AN - SCOPUS:85050234150

SN - 0741-3106

VL - 39

SP - 1318

EP - 1321

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 8412211

ER -

Effect of Doping Fluorine in Offset Region on Performance of Coplanar a-IGZO TFTs

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this