Effect of ferroelectric switching time on fatigue behaviors of (117)- and (00l)-oriented (Bi,La)4Ti3O12 thin films

Sung Min Yoon; Nam Yeal Lee; Sang Ouk Ryu; Woong Chul Shin; In Kyu You; Byoung Gon Yu

doi:10.1016/j.tsf.2005.03.004

Effect of ferroelectric switching time on fatigue behaviors of (117)- and (00l)-oriented (Bi,La)₄Ti₃O₁₂ thin films

Sung Min Yoon
, Nam Yeal Lee
, Sang Ouk Ryu
, Woong Chul Shin
, In Kyu You
, Byoung Gon Yu

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The effect of switching characteristics on the ferroelectric fatigue behaviors of the La-substituted Bi₄Ti₃O₁₂ (BLTO) capacitors were investigated. The parameter of switching time (t _s) for the fabricated BLTO capacitor was found to be dependent on the crystallographic orientations of prepared BLTO films and the capacitor size. It was clearly demonstrated that the BLTO capacitors experienced the fatigue degradation only when the switching pulse width was longer than t_s. In particular, these behaviors were apparently observed in the full-switching regime where a sufficiently large field was applied to the ferroelectric capacitors. For the first time, the fatigue behaviors of BLTO films with two different crystallographic orientations of (117) and (00l) were intensively studied under various measuring conditions.

Original language	English
Pages (from-to)	374-378
Number of pages	5
Journal	Thin Solid Films
Volume	484
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.03.004
Publication status	Published - 22 Jul 2005

Bibliographical note

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

Keywords

BLTO
Capacitors
Fatigue
Ferroelectric materials
Ferroelectric memory
Preferred orientation
Switching time
X-ray diffraction

Access to Document

10.1016/j.tsf.2005.03.004

Cite this

@article{0ca65a57e1ec4d5c8d1ce33ac1a068e6,

title = "Effect of ferroelectric switching time on fatigue behaviors of (117)- and (00l)-oriented (Bi,La)4Ti3O12 thin films",

abstract = "The effect of switching characteristics on the ferroelectric fatigue behaviors of the La-substituted Bi4Ti3O12 (BLTO) capacitors were investigated. The parameter of switching time (t s) for the fabricated BLTO capacitor was found to be dependent on the crystallographic orientations of prepared BLTO films and the capacitor size. It was clearly demonstrated that the BLTO capacitors experienced the fatigue degradation only when the switching pulse width was longer than ts. In particular, these behaviors were apparently observed in the full-switching regime where a sufficiently large field was applied to the ferroelectric capacitors. For the first time, the fatigue behaviors of BLTO films with two different crystallographic orientations of (117) and (00l) were intensively studied under various measuring conditions.",

keywords = "BLTO, Capacitors, Fatigue, Ferroelectric materials, Ferroelectric memory, Preferred orientation, Switching time, X-ray diffraction",

author = "Yoon, \{Sung Min\} and Lee, \{Nam Yeal\} and Ryu, \{Sang Ouk\} and Shin, \{Woong Chul\} and You, \{In Kyu\} and Yu, \{Byoung Gon\}",

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TY - JOUR

T1 - Effect of ferroelectric switching time on fatigue behaviors of (117)- and (00l)-oriented (Bi,La)4Ti3O12 thin films

AU - Yoon, Sung Min

AU - Lee, Nam Yeal

AU - Ryu, Sang Ouk

AU - Shin, Woong Chul

AU - You, In Kyu

AU - Yu, Byoung Gon

PY - 2005/7/22

Y1 - 2005/7/22

N2 - The effect of switching characteristics on the ferroelectric fatigue behaviors of the La-substituted Bi4Ti3O12 (BLTO) capacitors were investigated. The parameter of switching time (t s) for the fabricated BLTO capacitor was found to be dependent on the crystallographic orientations of prepared BLTO films and the capacitor size. It was clearly demonstrated that the BLTO capacitors experienced the fatigue degradation only when the switching pulse width was longer than ts. In particular, these behaviors were apparently observed in the full-switching regime where a sufficiently large field was applied to the ferroelectric capacitors. For the first time, the fatigue behaviors of BLTO films with two different crystallographic orientations of (117) and (00l) were intensively studied under various measuring conditions.

AB - The effect of switching characteristics on the ferroelectric fatigue behaviors of the La-substituted Bi4Ti3O12 (BLTO) capacitors were investigated. The parameter of switching time (t s) for the fabricated BLTO capacitor was found to be dependent on the crystallographic orientations of prepared BLTO films and the capacitor size. It was clearly demonstrated that the BLTO capacitors experienced the fatigue degradation only when the switching pulse width was longer than ts. In particular, these behaviors were apparently observed in the full-switching regime where a sufficiently large field was applied to the ferroelectric capacitors. For the first time, the fatigue behaviors of BLTO films with two different crystallographic orientations of (117) and (00l) were intensively studied under various measuring conditions.

KW - BLTO

KW - Capacitors

KW - Fatigue

KW - Ferroelectric materials

KW - Ferroelectric memory

KW - Preferred orientation

KW - Switching time

KW - X-ray diffraction

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DO - 10.1016/j.tsf.2005.03.004

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