Effect of Hf alloy in ZrOx gate insulator for solution processed a-IZTO thin film transistors

Ravindra Naik Bukke; Narendra Naik Mude; Jiseob Lee; Christophe Avis; Jin Jang

doi:10.1109/LED.2018.2880177

Effect of Hf alloy in ZrO_x gate insulator for solution processed a-IZTO thin film transistors

Ravindra Naik Bukke, Narendra Naik Mude, Jiseob Lee, Christophe Avis, Jin Jang

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We report the effect of Hf alloy in ZrO_x (HZO) gate insulator on the performance and stability of solution-processed amorphous indium-zinc-tin oxide (a-IZTO) thin-film transistors (TFTs). The Hf concentration in ZrO_x is varied from 0% to 50 %. The optimized concentration is found to be 10% and the TFT with 10% HfZrO_x exhibits the saturation mobility of 4.76 cm²V^-1 s^-1, a subthreshold swing of 70 mV/dec., and I_ON/I_OFF current ratio of 108. The TFT has no hysteresis and a small threshold voltage shift of 0.44 V upon positive-bias-stress at 5 V for 1 h. The improvements are due to the decrease in V_o (O vacancy) and -OH concentrations and the increase in M-O-M (M: metal) bond concentration at the a-IZTO/HZO interface. This is related with the diffusion of Hf into the a-IZTO active layer by the average concentration of 1.44 at. %.

Original language	English
Article number	8529239
Pages (from-to)	32-35
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	1
DOIs	https://doi.org/10.1109/LED.2018.2880177
Publication status	Published - Jan 2019

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Zirconium oxide
a-IZTO
hafnium oxide
oxide gate insulator
solution process
thin-film transistor

Access to Document

10.1109/LED.2018.2880177

Cite this

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title = "Effect of Hf alloy in ZrOx gate insulator for solution processed a-IZTO thin film transistors",

abstract = "We report the effect of Hf alloy in ZrOx (HZO) gate insulator on the performance and stability of solution-processed amorphous indium-zinc-tin oxide (a-IZTO) thin-film transistors (TFTs). The Hf concentration in ZrOx is varied from 0% to 50 %. The optimized concentration is found to be 10% and the TFT with 10% HfZrOx exhibits the saturation mobility of 4.76 cm2V-1 s-1, a subthreshold swing of 70 mV/dec., and ION/IOFF current ratio of 108. The TFT has no hysteresis and a small threshold voltage shift of 0.44 V upon positive-bias-stress at 5 V for 1 h. The improvements are due to the decrease in Vo (O vacancy) and -OH concentrations and the increase in M-O-M (M: metal) bond concentration at the a-IZTO/HZO interface. This is related with the diffusion of Hf into the a-IZTO active layer by the average concentration of 1.44 at. %.",

keywords = "Zirconium oxide, a-IZTO, hafnium oxide, oxide gate insulator, solution process, thin-film transistor",

author = "Bukke, {Ravindra Naik} and {Naik Mude}, Narendra and Jiseob Lee and Christophe Avis and Jin Jang",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

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AU - Bukke, Ravindra Naik

AU - Naik Mude, Narendra

AU - Lee, Jiseob

AU - Avis, Christophe

AU - Jang, Jin

PY - 2019/1

Y1 - 2019/1

N2 - We report the effect of Hf alloy in ZrOx (HZO) gate insulator on the performance and stability of solution-processed amorphous indium-zinc-tin oxide (a-IZTO) thin-film transistors (TFTs). The Hf concentration in ZrOx is varied from 0% to 50 %. The optimized concentration is found to be 10% and the TFT with 10% HfZrOx exhibits the saturation mobility of 4.76 cm2V-1 s-1, a subthreshold swing of 70 mV/dec., and ION/IOFF current ratio of 108. The TFT has no hysteresis and a small threshold voltage shift of 0.44 V upon positive-bias-stress at 5 V for 1 h. The improvements are due to the decrease in Vo (O vacancy) and -OH concentrations and the increase in M-O-M (M: metal) bond concentration at the a-IZTO/HZO interface. This is related with the diffusion of Hf into the a-IZTO active layer by the average concentration of 1.44 at. %.

AB - We report the effect of Hf alloy in ZrOx (HZO) gate insulator on the performance and stability of solution-processed amorphous indium-zinc-tin oxide (a-IZTO) thin-film transistors (TFTs). The Hf concentration in ZrOx is varied from 0% to 50 %. The optimized concentration is found to be 10% and the TFT with 10% HfZrOx exhibits the saturation mobility of 4.76 cm2V-1 s-1, a subthreshold swing of 70 mV/dec., and ION/IOFF current ratio of 108. The TFT has no hysteresis and a small threshold voltage shift of 0.44 V upon positive-bias-stress at 5 V for 1 h. The improvements are due to the decrease in Vo (O vacancy) and -OH concentrations and the increase in M-O-M (M: metal) bond concentration at the a-IZTO/HZO interface. This is related with the diffusion of Hf into the a-IZTO active layer by the average concentration of 1.44 at. %.

KW - Zirconium oxide

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KW - hafnium oxide

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