Abstract
This paper presents results of the investigation of hydrogen influence on the stability of low pressure chemical vapour deposition a-Si films. We measured boron- or phosphorus-doped films post-hydrogenated by ion implantation with different hydrogen doses. The dark conductivity after fast quenching and slow cooling and the isothermal relaxation were measured at different annealing temperatures. It was found that higher hydrogen concentration causes greater metastable changes but shorter relaxation time of defects.
| Original language | English |
|---|---|
| Pages (from-to) | 459-464 |
| Number of pages | 6 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 71 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1 Mar 2002 |
Bibliographical note
Funding Information:This work was partially sponsored by the Polish–American Maria Sklodowska–Curie Fund II project MEN/DOE-98-345.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Amorphous silicon
- Hydrogen
- Metastability
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