Effect of ion doping temperature on electrical properties of APCVD a-Si

Kyung Ha Lee; Byeong Yeon Moon; Yoo Chan Chung; Seung Min Lee; Sung Chul Kim; Donggil Kim; Jin Jang

doi:10.1557/proc-345-35

Effect of ion doping temperature on electrical properties of APCVD a-Si

Kyung Ha Lee
, Byeong Yeon Moon
, Yoo Chan Chung
, Seung Min Lee
, Sung Chul Kim
, Donggil Kim
, Jin Jang

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have studied the effect of ion doping on the electrical properties for atmospheric pressure chemical vapor deposition (APCVD) amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimum doping temperatures for n- and p-type a-Si films were found to be > 10^-2 and >10^-4 S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-Si:H. We obtained the field effect mobility of > 1 cm²/Vs for APCVD a-Si TFT using ion doped n⁺-layer.

Original language	English
Pages (from-to)	35-40
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	345
DOIs	https://doi.org/10.1557/proc-345-35
Publication status	Published - 1994
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: 5 Apr 1994 → 6 Apr 1994

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@article{c53ddc4bffd940c691c4fec9c85455d2,

title = "Effect of ion doping temperature on electrical properties of APCVD a-Si",

abstract = "We have studied the effect of ion doping on the electrical properties for atmospheric pressure chemical vapor deposition (APCVD) amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimum doping temperatures for n- and p-type a-Si films were found to be > 10-2 and >10-4 S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-Si:H. We obtained the field effect mobility of > 1 cm2/Vs for APCVD a-Si TFT using ion doped n+-layer.",

author = "Lee, \{Kyung Ha\} and Moon, \{Byeong Yeon\} and Chung, \{Yoo Chan\} and Lee, \{Seung Min\} and Kim, \{Sung Chul\} and Donggil Kim and Jin Jang",

year = "1994",

doi = "10.1557/proc-345-35",

language = "English",

volume = "345",

pages = "35--40",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Effect of ion doping temperature on electrical properties of APCVD a-Si

AU - Lee, Kyung Ha

AU - Moon, Byeong Yeon

AU - Chung, Yoo Chan

AU - Lee, Seung Min

AU - Kim, Sung Chul

AU - Kim, Donggil

AU - Jang, Jin

PY - 1994

Y1 - 1994

N2 - We have studied the effect of ion doping on the electrical properties for atmospheric pressure chemical vapor deposition (APCVD) amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimum doping temperatures for n- and p-type a-Si films were found to be > 10-2 and >10-4 S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-Si:H. We obtained the field effect mobility of > 1 cm2/Vs for APCVD a-Si TFT using ion doped n+-layer.

AB - We have studied the effect of ion doping on the electrical properties for atmospheric pressure chemical vapor deposition (APCVD) amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimum doping temperatures for n- and p-type a-Si films were found to be > 10-2 and >10-4 S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-Si:H. We obtained the field effect mobility of > 1 cm2/Vs for APCVD a-Si TFT using ion doped n+-layer.

UR - https://www.scopus.com/pages/publications/0028753157

U2 - 10.1557/proc-345-35

DO - 10.1557/proc-345-35

M3 - Conference article

AN - SCOPUS:0028753157

SN - 0272-9172

VL - 345

SP - 35

EP - 40

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Spring Meeting

Y2 - 5 April 1994 through 6 April 1994

ER -

Effect of ion doping temperature on electrical properties of APCVD a-Si

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