Effect of ion doping temperature on electrical properties of APCVD A-SI

Kyung Ha Lee; Byeong Yeon Moon; Yoo Chan Chung; Seung Min Lee; Sung Chul Kim; Donggil Kim; Jin Jang

doi:10.1557/proc-336-469

Effect of ion doping temperature on electrical properties of APCVD A-SI

Kyung Ha Lee
, Byeong Yeon Moon
, Yoo Chan Chung
, Seung Min Lee
, Sung Chul Kim
, Donggil Kim
, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have studied the effect of ion doping on the electrical properties for atmospheric pressure chemical vapor deposition (APCVD) amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimum doping temperatures for n^- and p-type a-Si films were found to be > 10^-2 and >10^-4S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-Si:H. We obtained the field effect mobility of > 1 cm²Vs for APCVD a-Si TFT using ion doped n⁺-layer.

Original language	English
Title of host publication	Amorphous Silicon Technology - 1994
Publisher	Materials Research Society
Pages	469-474
Number of pages	6
ISBN (Print)	1558992367, 9781558992368
DOIs	https://doi.org/10.1557/proc-336-469
Publication status	Published - 1994
Event	1994 MRS Spring Meeting - San Francisco, CA, United States Duration: 4 Apr 1994 → 8 Apr 1994

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	336
ISSN (Print)	0272-9172

Conference

Conference	1994 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	4/04/94 → 8/04/94

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10.1557/proc-336-469

Cite this

@inproceedings{c5bed0f1543d46439a4d2b7c5e67a96b,

title = "Effect of ion doping temperature on electrical properties of APCVD A-SI",

abstract = "We have studied the effect of ion doping on the electrical properties for atmospheric pressure chemical vapor deposition (APCVD) amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimum doping temperatures for n- and p-type a-Si films were found to be > 10-2 and >10-4S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-Si:H. We obtained the field effect mobility of > 1 cm2Vs for APCVD a-Si TFT using ion doped n+-layer.",

author = "Lee, \{Kyung Ha\} and Moon, \{Byeong Yeon\} and Chung, \{Yoo Chan\} and Lee, \{Seung Min\} and Kim, \{Sung Chul\} and Donggil Kim and Jin Jang",

year = "1994",

doi = "10.1557/proc-336-469",

language = "English",

isbn = "1558992367",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "469--474",

booktitle = "Amorphous Silicon Technology - 1994",

}

Lee, KH, Moon, BY, Chung, YC, Lee, SM, Kim, SC, Kim, D & Jang, J 1994, Effect of ion doping temperature on electrical properties of APCVD A-SI. in Amorphous Silicon Technology - 1994. Materials Research Society Symposium Proceedings, vol. 336, Materials Research Society, pp. 469-474, 1994 MRS Spring Meeting, San Francisco, CA, United States, 4/04/94. https://doi.org/10.1557/proc-336-469

Effect of ion doping temperature on electrical properties of APCVD A-SI. / Lee, Kyung Ha; Moon, Byeong Yeon; Chung, Yoo Chan et al.
Amorphous Silicon Technology - 1994. Materials Research Society, 1994. p. 469-474 (Materials Research Society Symposium Proceedings; Vol. 336).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of ion doping temperature on electrical properties of APCVD A-SI

AU - Lee, Kyung Ha

AU - Moon, Byeong Yeon

AU - Chung, Yoo Chan

AU - Lee, Seung Min

AU - Kim, Sung Chul

AU - Kim, Donggil

AU - Jang, Jin

PY - 1994

Y1 - 1994

N2 - We have studied the effect of ion doping on the electrical properties for atmospheric pressure chemical vapor deposition (APCVD) amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimum doping temperatures for n- and p-type a-Si films were found to be > 10-2 and >10-4S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-Si:H. We obtained the field effect mobility of > 1 cm2Vs for APCVD a-Si TFT using ion doped n+-layer.

AB - We have studied the effect of ion doping on the electrical properties for atmospheric pressure chemical vapor deposition (APCVD) amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimum doping temperatures for n- and p-type a-Si films were found to be > 10-2 and >10-4S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-Si:H. We obtained the field effect mobility of > 1 cm2Vs for APCVD a-Si TFT using ion doped n+-layer.

UR - https://www.scopus.com/pages/publications/84897726405

U2 - 10.1557/proc-336-469

DO - 10.1557/proc-336-469

M3 - Conference contribution

AN - SCOPUS:84897726405

SN - 1558992367

SN - 9781558992368

T3 - Materials Research Society Symposium Proceedings

SP - 469

EP - 474

BT - Amorphous Silicon Technology - 1994

PB - Materials Research Society

T2 - 1994 MRS Spring Meeting

Y2 - 4 April 1994 through 8 April 1994

ER -

Effect of ion doping temperature on electrical properties of APCVD A-SI

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