Effect of ion implantation of Pt bottom electrodes on the properties of ferroelectric Pb(Zr, Ti)O3 thin films

Jeung Sun Ahn; Kyung Haeng Lee; Kwang Bae Lee

doi:10.3938/jkps.51.659

Effect of ion implantation of Pt bottom electrodes on the properties of ferroelectric Pb(Zr, Ti)O₃ thin films

Jeung Sun Ahn
, Kyung Haeng Lee
, Kwang Bae Lee

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effect of ion implantation of the Pt bottom electrodes (Pt/TiO ₂/Si) on the characteristics of PZT (Pb_1.1(Zr _0.53Ti_0.47)O₃) thin films has been investigated for doses of 5 × 10¹⁴, 5 × 10¹⁵ and 5 × 10¹⁶ cm^-2 of O ions, as well as of N ions. The crystallinity of the Pt electrodes induced by ion implantation is improved for both O-ion and N-ion implantation with the proper doses of about 10¹⁵ cm^-2. Test PZT capacitors prepared on implanted Pt bottom electrodes show a higher remanent polarization of 25 μC/cm² and a lower coercive field of 34 kV/cm and their leakage current values decrease by about an order of magnitude compared to those of a PZT thin film prepared on as-deposited Pt electrodes. Such improvements of PZT thin films are believed to be due to the enhanced microstructures of the Pt bottom electrodes caused by ion implantation.

Original language	English
Pages (from-to)	659-663
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	51
Issue number	2 PART I
DOIs	https://doi.org/10.3938/jkps.51.659
Publication status	Published - Aug 2007

Keywords

Ferroelectric PZT thin films
Ion implantation
P-E hysteresis loops
XPS
XRD

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title = "Effect of ion implantation of Pt bottom electrodes on the properties of ferroelectric Pb(Zr, Ti)O3 thin films",

abstract = "The effect of ion implantation of the Pt bottom electrodes (Pt/TiO 2/Si) on the characteristics of PZT (Pb1.1(Zr 0.53Ti0.47)O3) thin films has been investigated for doses of 5 × 1014, 5 × 1015 and 5 × 1016 cm-2 of O ions, as well as of N ions. The crystallinity of the Pt electrodes induced by ion implantation is improved for both O-ion and N-ion implantation with the proper doses of about 1015 cm-2. Test PZT capacitors prepared on implanted Pt bottom electrodes show a higher remanent polarization of 25 μC/cm2 and a lower coercive field of 34 kV/cm and their leakage current values decrease by about an order of magnitude compared to those of a PZT thin film prepared on as-deposited Pt electrodes. Such improvements of PZT thin films are believed to be due to the enhanced microstructures of the Pt bottom electrodes caused by ion implantation.",

keywords = "Ferroelectric PZT thin films, Ion implantation, P-E hysteresis loops, XPS, XRD",

author = "Ahn, \{Jeung Sun\} and Lee, \{Kyung Haeng\} and Lee, \{Kwang Bae\}",

year = "2007",

month = aug,

doi = "10.3938/jkps.51.659",

language = "English",

volume = "51",

pages = "659--663",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "2 PART I",

}

TY - JOUR

T1 - Effect of ion implantation of Pt bottom electrodes on the properties of ferroelectric Pb(Zr, Ti)O3 thin films

AU - Ahn, Jeung Sun

AU - Lee, Kyung Haeng

AU - Lee, Kwang Bae

PY - 2007/8

Y1 - 2007/8

N2 - The effect of ion implantation of the Pt bottom electrodes (Pt/TiO 2/Si) on the characteristics of PZT (Pb1.1(Zr 0.53Ti0.47)O3) thin films has been investigated for doses of 5 × 1014, 5 × 1015 and 5 × 1016 cm-2 of O ions, as well as of N ions. The crystallinity of the Pt electrodes induced by ion implantation is improved for both O-ion and N-ion implantation with the proper doses of about 1015 cm-2. Test PZT capacitors prepared on implanted Pt bottom electrodes show a higher remanent polarization of 25 μC/cm2 and a lower coercive field of 34 kV/cm and their leakage current values decrease by about an order of magnitude compared to those of a PZT thin film prepared on as-deposited Pt electrodes. Such improvements of PZT thin films are believed to be due to the enhanced microstructures of the Pt bottom electrodes caused by ion implantation.

AB - The effect of ion implantation of the Pt bottom electrodes (Pt/TiO 2/Si) on the characteristics of PZT (Pb1.1(Zr 0.53Ti0.47)O3) thin films has been investigated for doses of 5 × 1014, 5 × 1015 and 5 × 1016 cm-2 of O ions, as well as of N ions. The crystallinity of the Pt electrodes induced by ion implantation is improved for both O-ion and N-ion implantation with the proper doses of about 1015 cm-2. Test PZT capacitors prepared on implanted Pt bottom electrodes show a higher remanent polarization of 25 μC/cm2 and a lower coercive field of 34 kV/cm and their leakage current values decrease by about an order of magnitude compared to those of a PZT thin film prepared on as-deposited Pt electrodes. Such improvements of PZT thin films are believed to be due to the enhanced microstructures of the Pt bottom electrodes caused by ion implantation.

KW - Ferroelectric PZT thin films

KW - Ion implantation

KW - P-E hysteresis loops

KW - XPS

KW - XRD

UR - https://www.scopus.com/pages/publications/34548297502

U2 - 10.3938/jkps.51.659

DO - 10.3938/jkps.51.659

M3 - Article

AN - SCOPUS:34548297502

SN - 0374-4884

VL - 51

SP - 659

EP - 663

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 2 PART I

ER -

Effect of ion implantation of Pt bottom electrodes on the properties of ferroelectric Pb(Zr, Ti)O₃ thin films

Abstract

Keywords

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