Effect of ion-implantation on forming and resistive-switching response of NiO thin films

Robert G. Elliman; Muhammad N. Saleh; Sung Kim; Dinesh K. Venkatachalam; Taehyun Kim; Kidane Belay

doi:10.1557/proc-1250-g05-06

Effect of ion-implantation on forming and resistive-switching response of NiO thin films

Robert G. Elliman, Muhammad N. Saleh, Sung Kim, Dinesh K. Venkatachalam, Taehyun Kim, Kidane Belay

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

The forming voltage and set/reset response of sputter-deposited NiO thin films is studied as a function of implant fluence for samples implanted with Ni and O ions. The forming voltage of the films is shown to decrease with increasing ion fluence and to scale with the damage production rate of the different ions. In contrast, the set/reset response of the films was largely unaffected by the ion-implantation. These results are discussed in terms of the filamentary model of conduction and the thermochemical model of resistive switching.

Original language	English
Title of host publication	Materials and Physics for Nonvolatile Memories II
Publisher	Materials Research Society
Pages	215-220
Number of pages	6
ISBN (Print)	9781605112237
DOIs	https://doi.org/10.1557/proc-1250-g05-06
Publication status	Published - 2010

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1250
ISSN (Print)	0272-9172

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Elliman, R. G., Saleh, M. N., Kim, S., Venkatachalam, D. K., Kim, T., & Belay, K. (2010). Effect of ion-implantation on forming and resistive-switching response of NiO thin films. In Materials and Physics for Nonvolatile Memories II (pp. 215-220). (Materials Research Society Symposium Proceedings; Vol. 1250). Materials Research Society. https://doi.org/10.1557/proc-1250-g05-06

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title = "Effect of ion-implantation on forming and resistive-switching response of NiO thin films",

abstract = "The forming voltage and set/reset response of sputter-deposited NiO thin films is studied as a function of implant fluence for samples implanted with Ni and O ions. The forming voltage of the films is shown to decrease with increasing ion fluence and to scale with the damage production rate of the different ions. In contrast, the set/reset response of the films was largely unaffected by the ion-implantation. These results are discussed in terms of the filamentary model of conduction and the thermochemical model of resistive switching.",

author = "Elliman, {Robert G.} and Saleh, {Muhammad N.} and Sung Kim and Venkatachalam, {Dinesh K.} and Taehyun Kim and Kidane Belay",

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doi = "10.1557/proc-1250-g05-06",

language = "English",

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Effect of ion-implantation on forming and resistive-switching response of NiO thin films. / Elliman, Robert G.; Saleh, Muhammad N.; Kim, Sung et al.
Materials and Physics for Nonvolatile Memories II. Materials Research Society, 2010. p. 215-220 (Materials Research Society Symposium Proceedings; Vol. 1250).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kim, Sung

AU - Venkatachalam, Dinesh K.

AU - Kim, Taehyun

AU - Belay, Kidane

PY - 2010

Y1 - 2010

N2 - The forming voltage and set/reset response of sputter-deposited NiO thin films is studied as a function of implant fluence for samples implanted with Ni and O ions. The forming voltage of the films is shown to decrease with increasing ion fluence and to scale with the damage production rate of the different ions. In contrast, the set/reset response of the films was largely unaffected by the ion-implantation. These results are discussed in terms of the filamentary model of conduction and the thermochemical model of resistive switching.

AB - The forming voltage and set/reset response of sputter-deposited NiO thin films is studied as a function of implant fluence for samples implanted with Ni and O ions. The forming voltage of the films is shown to decrease with increasing ion fluence and to scale with the damage production rate of the different ions. In contrast, the set/reset response of the films was largely unaffected by the ion-implantation. These results are discussed in terms of the filamentary model of conduction and the thermochemical model of resistive switching.

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AN - SCOPUS:78650324740

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BT - Materials and Physics for Nonvolatile Memories II

PB - Materials Research Society

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Effect of ion-implantation on forming and resistive-switching response of NiO thin films

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