Abstract
We studied the effect of lanthanum incorporation on the electrical properties of ZnO TFT fabricated by spray pyrolysis. The turn-on voltage (VON) shifts towards 0 V by La doping. Also, Subthreshold swing (SS) decreases significantly from 387 to 251 mV/dec, by incorporation of lanthanum in ZnO.
| Original language | English |
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| Title of host publication | 26th International Display Workshops, IDW 2019 |
| Publisher | International Display Workshops |
| Pages | 482-484 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781713806301 |
| Publication status | Published - 2019 |
| Event | 26th International Display Workshops, IDW 2019 - Sapporo, Japan Duration: 27 Nov 2019 → 29 Nov 2019 |
Publication series
| Name | Proceedings of the International Display Workshops |
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| Volume | 2 |
| ISSN (Print) | 1883-2490 |
Conference
| Conference | 26th International Display Workshops, IDW 2019 |
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| Country/Territory | Japan |
| City | Sapporo |
| Period | 27/11/19 → 29/11/19 |
Bibliographical note
Publisher Copyright:© 2019 ITE and SID.
Keywords
- Lanthanum
- Solution-process
- Spray pyrolysis
- Thin-film transistor
- ZnO