Effect of NH3 pretreatment on the surface morphologies of GaN films grown on miscut sapphire substrates by using hydride vapor phase epitaxy

Sanghwa Lee; Taegeon Oh; Boa Shin; Jai Weon Jean; Hyeokmin Choe; Chinkyo Kim

doi:10.3938/jkps.50.785

Effect of NH₃ pretreatment on the surface morphologies of GaN films grown on miscut sapphire substrates by using hydride vapor phase epitaxy

Sanghwa Lee, Taegeon Oh, Boa Shin, Jai Weon Jean, Hyeokmin Choe, Chinkyo Kim

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effect of NH₃ pretreatment at high temperature (above 1000 °C) on the surface morphologies of GaN films grown on 0.3°-miscut sapphire substrates by using hydride vapor phase epitaxy (HVPE) was investigated by employing scanning electron microscopy (SEM) and atomic force microscopy (AFM). NH₃ pretreatment introduced many hillocks on the surfaces of the GaN films, and the coarsening effect of nucleated grains was clearly observed with the increasing flow rate and exposure time of NH₃. Unlike previously reported results on no-miscut substrates by other researchers, high-temperature pretreatment of NH₃ did not produce mirror-like fiat surface morphologies, but the GaN films grown without NH₃ pretreatment showed flat terraces with steps, which were supposedly due to an enhanced nucleation mechanism through the step edges present in miscut sapphire substrates.

Original language	English
Pages (from-to)	785-788
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	3
DOIs	https://doi.org/10.3938/jkps.50.785
Publication status	Published - Mar 2007

Bibliographical note

Funding Information:
The present work has been supported by a grant-in-aid for Scientific Research (contract no. 1305002) from the Ministry of Education, Science and Culture of Japan, by an International Collaborative Research Project Grant-2000 of Materials and Structures Laboratory, Tokyo Institute of Technology, by JSPS, Monbusho (Grant-in-Aid for Scientific Research nos. 08455299 and 0997098), Program “Superconductivity” (grant no. 96078), and by RFBR (grant no. 98-03-32515a).

Keywords

Atomic force microscopy
GaN
HVPE
Nucleation

Access to Document

10.3938/jkps.50.785

Cite this

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title = "Effect of NH3 pretreatment on the surface morphologies of GaN films grown on miscut sapphire substrates by using hydride vapor phase epitaxy",

abstract = "The effect of NH3 pretreatment at high temperature (above 1000 °C) on the surface morphologies of GaN films grown on 0.3°-miscut sapphire substrates by using hydride vapor phase epitaxy (HVPE) was investigated by employing scanning electron microscopy (SEM) and atomic force microscopy (AFM). NH3 pretreatment introduced many hillocks on the surfaces of the GaN films, and the coarsening effect of nucleated grains was clearly observed with the increasing flow rate and exposure time of NH3. Unlike previously reported results on no-miscut substrates by other researchers, high-temperature pretreatment of NH3 did not produce mirror-like fiat surface morphologies, but the GaN films grown without NH3 pretreatment showed flat terraces with steps, which were supposedly due to an enhanced nucleation mechanism through the step edges present in miscut sapphire substrates.",

keywords = "Atomic force microscopy, GaN, HVPE, Nucleation",

author = "Sanghwa Lee and Taegeon Oh and Boa Shin and Jean, {Jai Weon} and Hyeokmin Choe and Chinkyo Kim",

note = "Funding Information: The present work has been supported by a grant-in-aid for Scientific Research (contract no. 1305002) from the Ministry of Education, Science and Culture of Japan, by an International Collaborative Research Project Grant-2000 of Materials and Structures Laboratory, Tokyo Institute of Technology, by JSPS, Monbusho (Grant-in-Aid for Scientific Research nos. 08455299 and 0997098), Program “Superconductivity” (grant no. 96078), and by RFBR (grant no. 98-03-32515a). ",

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AU - Lee, Sanghwa

AU - Oh, Taegeon

AU - Shin, Boa

AU - Jean, Jai Weon

AU - Choe, Hyeokmin

AU - Kim, Chinkyo

N1 - Funding Information: The present work has been supported by a grant-in-aid for Scientific Research (contract no. 1305002) from the Ministry of Education, Science and Culture of Japan, by an International Collaborative Research Project Grant-2000 of Materials and Structures Laboratory, Tokyo Institute of Technology, by JSPS, Monbusho (Grant-in-Aid for Scientific Research nos. 08455299 and 0997098), Program “Superconductivity” (grant no. 96078), and by RFBR (grant no. 98-03-32515a).

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