Effect of oxygen partial pressure on the performance of a-IGZO TFTs with a self-aligned top-gate coplanar structure

Sang Hyun Ryu; Dong Han Kang; Youngchul Park; In Kang; Jin Jang

Effect of oxygen partial pressure on the performance of a-IGZO TFTs with a self-aligned top-gate coplanar structure

Sang Hyun Ryu, Dong Han Kang, Youngchul Park, In Kang, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Effect of oxygen partial-pressure (P_o) is investigated in amorphous-InGaZnO thin-film transistors. In addition to improved stability, the threshold-voltage shifts from -0.3 to 0.8 V, while mobility decreases from 20 to 8 cm²/V·s as the P_o increases from 2 to 16 seem. P_o can therefore be used to control the threshold-voltage.

Original language	English
Title of host publication	Society for Information Display - 18th International Display Workshops 2011, IDW'11
Pages	599-602
Number of pages	4
Publication status	Published - 2011
Event	18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: 7 Dec 2011 → 9 Dec 2011

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Conference

Conference	18th International Display Workshops 2011, IDW 2011
Country/Territory	Japan
City	Nagoya
Period	7/12/11 → 9/12/11

UN SDGs

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@inproceedings{940ebaa5ee8c4af08e2a4a7b8b3bdf5e,

title = "Effect of oxygen partial pressure on the performance of a-IGZO TFTs with a self-aligned top-gate coplanar structure",

abstract = "Effect of oxygen partial-pressure (Po) is investigated in amorphous-InGaZnO thin-film transistors. In addition to improved stability, the threshold-voltage shifts from -0.3 to 0.8 V, while mobility decreases from 20 to 8 cm2/V·s as the Po increases from 2 to 16 seem. Po can therefore be used to control the threshold-voltage.",

author = "Ryu, {Sang Hyun} and Kang, {Dong Han} and Youngchul Park and In Kang and Jin Jang",

year = "2011",

language = "English",

isbn = "9781622761906",

series = "Proceedings of the International Display Workshops",

pages = "599--602",

booktitle = "Society for Information Display - 18th International Display Workshops 2011, IDW'11",

}

Ryu, SH, Kang, DH, Park, Y, Kang, I & Jang, J 2011, Effect of oxygen partial pressure on the performance of a-IGZO TFTs with a self-aligned top-gate coplanar structure. in Society for Information Display - 18th International Display Workshops 2011, IDW'11. Proceedings of the International Display Workshops, vol. 1, pp. 599-602, 18th International Display Workshops 2011, IDW 2011, Nagoya, Japan, 7/12/11.

Effect of oxygen partial pressure on the performance of a-IGZO TFTs with a self-aligned top-gate coplanar structure. / Ryu, Sang Hyun; Kang, Dong Han; Park, Youngchul et al.
Society for Information Display - 18th International Display Workshops 2011, IDW'11. 2011. p. 599-602 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of oxygen partial pressure on the performance of a-IGZO TFTs with a self-aligned top-gate coplanar structure

AU - Ryu, Sang Hyun

AU - Kang, Dong Han

AU - Park, Youngchul

AU - Kang, In

AU - Jang, Jin

PY - 2011

Y1 - 2011

N2 - Effect of oxygen partial-pressure (Po) is investigated in amorphous-InGaZnO thin-film transistors. In addition to improved stability, the threshold-voltage shifts from -0.3 to 0.8 V, while mobility decreases from 20 to 8 cm2/V·s as the Po increases from 2 to 16 seem. Po can therefore be used to control the threshold-voltage.

AB - Effect of oxygen partial-pressure (Po) is investigated in amorphous-InGaZnO thin-film transistors. In addition to improved stability, the threshold-voltage shifts from -0.3 to 0.8 V, while mobility decreases from 20 to 8 cm2/V·s as the Po increases from 2 to 16 seem. Po can therefore be used to control the threshold-voltage.

UR - http://www.scopus.com/inward/record.url?scp=84870685199&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84870685199

SN - 9781622761906

T3 - Proceedings of the International Display Workshops

SP - 599

EP - 602

BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11

T2 - 18th International Display Workshops 2011, IDW 2011

Y2 - 7 December 2011 through 9 December 2011

ER -

Effect of oxygen partial pressure on the performance of a-IGZO TFTs with a self-aligned top-gate coplanar structure

Abstract

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