Effect of refined nitridation of sapphire substrates in hydride vapor phase epitaxy: Definite correlation of structural characteristics between a low-temperature-grown buffer layer and a subsequent high-temperature-grown layer of GaN

Hyun Jae Lee, Jun Seok Ha, Hyo Jong Lee, Seogwoo Lee, Meoungwhan Cho, T. Yao, Kim Chinkyo, Soon Ku Hong, Jiho Chang

Research output: Contribution to journal › Article › peer-review

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