Effect of the Blocking Oxide Layer with Asymmetric Taper Angles in 3-D NAND Flash Memories

Jun Gyu Lee, Woo Je Jung, Jae Hyeon Park, Keon Ho Yoo, Tae Whan Kim

Research output: Contribution to journalArticlepeer-review

Abstract

The tapered channel effect is a major concern in three-dimensional (3-D) NAND technology because the effect causes differences in the electrical characteristics, including the threshold voltage (VT), between the upper and the lower cells. We simulated the tapered channel effect by using Sentaurus technology, computer-aided design (TCAD) tools, and based on the results, we propose a novel method to lessen the non-uniformity of the threshold voltage shift (ΔV T) between the cells. The difference in Δ V T between the upper and the lower cells due to the tapered channel can be reduced by employing a tapered blocking oxide layer with a proper taper angle. These results will be helpful in designing reliable 3-D NAND flash memories.

Original languageEnglish
Article number9514533
Pages (from-to)774-777
Number of pages4
JournalIEEE Journal of the Electron Devices Society
Volume9
DOIs
Publication statusPublished - 2021

Keywords

  • 3-D NAND flash memories
  • tapered channel
  • threshold voltage shift

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