Effect of the statistical shift on the anomalous conductivities of n-type hydrogenated amorphous silicon

Byung Gook Yoon, Choochon Lee, Jin Jang

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

We calculated the shift of Fermi energy EF with temperature, using a model density of states for hydrogenated amorphous silicon (a-Si:H) similar to that of deep level transient spectroscopy results, by a numerical method. The conductivity σ was calculated from the calculated E F as a function of temperature. It was found that some features of anomalous transport phenomena of n-type a-Si:H such as kinks or the continuous bending of log σ vs 1/T curves and the Meyer-Neldel-type preexponential factors can be explained, at least in part, by the statistical shift alone.

Original languageEnglish
Pages (from-to)673-676
Number of pages4
JournalJournal of Applied Physics
Volume60
Issue number2
DOIs
Publication statusPublished - 1986

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