Effects of doping methods on characteristics of InAs quantum dots

Young Min Park; Young Ju Park; Kwang Moo Kim; Jae Cheol Shin; Eun Kyu Kim; Maeng Ho Son; Sung Woo Hwang; Keon Ho Yoo

doi:10.1109/IMNC.2001.984149

Effects of doping methods on characteristics of InAs quantum dots

Young Min Park
, Young Ju Park
, Kwang Moo Kim
, Jae Cheol Shin
, Eun Kyu Kim
, Maeng Ho Son
, Sung Woo Hwang
, Keon Ho Yoo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We compared the effects of two different doping methods on electronic states of self-assembled InAs quantum dots using photoluminescence and C-V spectroscopy. Analytical interpretation will be presented in conjunction with the experimental data.

Original language	English
Title of host publication	2001 International Microprocesses and Nanotechnology Conference, MNC 2001
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	180-181
Number of pages	2
ISBN (Electronic)	4891140178, 9784891140175
DOIs	https://doi.org/10.1109/IMNC.2001.984149
Publication status	Published - 2001
Event	International Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan Duration: 31 Oct 2001 → 2 Nov 2001

Publication series

Name	2001 International Microprocesses and Nanotechnology Conference, MNC 2001

Conference

Conference	International Microprocesses and Nanotechnology Conference, MNC 2001
Country/Territory	Japan
City	Shimane
Period	31/10/01 → 2/11/01

Bibliographical note

Publisher Copyright:
© 2001 Japan Soc. Of Applied Physics.

Access to Document

10.1109/IMNC.2001.984149

Cite this

Park, Y. M., Park, Y. J., Kim, K. M., Shin, J. C., Kim, E. K., Son, M. H., Hwang, S. W., & Yoo, K. H. (2001). Effects of doping methods on characteristics of InAs quantum dots. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001 (pp. 180-181). Article 984149 (2001 International Microprocesses and Nanotechnology Conference, MNC 2001). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2001.984149

@inproceedings{d1d520e92a2444478be5e953924588d9,

title = "Effects of doping methods on characteristics of InAs quantum dots",

abstract = "We compared the effects of two different doping methods on electronic states of self-assembled InAs quantum dots using photoluminescence and C-V spectroscopy. Analytical interpretation will be presented in conjunction with the experimental data.",

author = "Park, \{Young Min\} and Park, \{Young Ju\} and Kim, \{Kwang Moo\} and Shin, \{Jae Cheol\} and Kim, \{Eun Kyu\} and Son, \{Maeng Ho\} and Hwang, \{Sung Woo\} and Yoo, \{Keon Ho\}",

note = "Publisher Copyright: {\textcopyright} 2001 Japan Soc. Of Applied Physics.; International Microprocesses and Nanotechnology Conference, MNC 2001 ; Conference date: 31-10-2001 Through 02-11-2001",

year = "2001",

doi = "10.1109/IMNC.2001.984149",

language = "English",

series = "2001 International Microprocesses and Nanotechnology Conference, MNC 2001",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "180--181",

booktitle = "2001 International Microprocesses and Nanotechnology Conference, MNC 2001",

address = "United States",

}

Park, YM, Park, YJ, Kim, KM, Shin, JC, Kim, EK, Son, MH, Hwang, SW & Yoo, KH 2001, Effects of doping methods on characteristics of InAs quantum dots. in 2001 International Microprocesses and Nanotechnology Conference, MNC 2001., 984149, 2001 International Microprocesses and Nanotechnology Conference, MNC 2001, Institute of Electrical and Electronics Engineers Inc., pp. 180-181, International Microprocesses and Nanotechnology Conference, MNC 2001, Shimane, Japan, 31/10/01. https://doi.org/10.1109/IMNC.2001.984149

Effects of doping methods on characteristics of InAs quantum dots. / Park, Young Min; Park, Young Ju; Kim, Kwang Moo et al.
2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 180-181 984149 (2001 International Microprocesses and Nanotechnology Conference, MNC 2001).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effects of doping methods on characteristics of InAs quantum dots

AU - Park, Young Min

AU - Park, Young Ju

AU - Kim, Kwang Moo

AU - Shin, Jae Cheol

AU - Kim, Eun Kyu

AU - Son, Maeng Ho

AU - Hwang, Sung Woo

AU - Yoo, Keon Ho

PY - 2001

Y1 - 2001

N2 - We compared the effects of two different doping methods on electronic states of self-assembled InAs quantum dots using photoluminescence and C-V spectroscopy. Analytical interpretation will be presented in conjunction with the experimental data.

AB - We compared the effects of two different doping methods on electronic states of self-assembled InAs quantum dots using photoluminescence and C-V spectroscopy. Analytical interpretation will be presented in conjunction with the experimental data.

UR - https://www.scopus.com/pages/publications/84960356376

U2 - 10.1109/IMNC.2001.984149

DO - 10.1109/IMNC.2001.984149

M3 - Conference contribution

AN - SCOPUS:84960356376

T3 - 2001 International Microprocesses and Nanotechnology Conference, MNC 2001

SP - 180

EP - 181

BT - 2001 International Microprocesses and Nanotechnology Conference, MNC 2001

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Microprocesses and Nanotechnology Conference, MNC 2001

Y2 - 31 October 2001 through 2 November 2001

ER -

Park YM, Park YJ, Kim KM, Shin JC, Kim EK, Son MH et al. Effects of doping methods on characteristics of InAs quantum dots. In 2001 International Microprocesses and Nanotechnology Conference, MNC 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 180-181. 984149. (2001 International Microprocesses and Nanotechnology Conference, MNC 2001). doi: 10.1109/IMNC.2001.984149

Effects of doping methods on characteristics of InAs quantum dots

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