TY - GEN
T1 - Effects of multi-gates on performance and stability of self-aligned coplanar a-IGZO TFTs
AU - Han, Jiung
AU - Kang, Donghan
AU - Jang, Jin
N1 - Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2012
Y1 - 2012
N2 - We studied the effects of multiple gates on the performance and stability of a-IGZO TFTs. The subthreshold region of transfer characteristics shift to negative gate voltage direction with increasing gate number, and the threshold voltage shift induced by positive gate bias stress decreases with increasing gate number.
AB - We studied the effects of multiple gates on the performance and stability of a-IGZO TFTs. The subthreshold region of transfer characteristics shift to negative gate voltage direction with increasing gate number, and the threshold voltage shift induced by positive gate bias stress decreases with increasing gate number.
KW - Amorphous indium-gallium-zinc-oxide (a-IGZO)
KW - Multi-gates
KW - Self-aligned coplanar
KW - Thin-film transistor (TFT)
UR - http://www.scopus.com/inward/record.url?scp=84885932066&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84885932066
SN - 9781627486521
T3 - Proceedings of the International Display Workshops
SP - 265
EP - 268
BT - Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
T2 - 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
Y2 - 4 December 2012 through 7 December 2012
ER -
