Efficient cathode contacts through Ag-doping in multifunctional strong nucleophilic electron transport layer for high performance inverted OLEDs

This paper presents an efficient and stable green inverted organic light emitting diode (IOLED) using multifunctional and strong nucleophilic quality electron transport material (1,3-bis(2-phenyl-1,10-phenanthrolin-4-yl)benzene (m-bPPhenB)) with silver (Ag) as an n-dopant. By the energy level alignment study using in-situ ultraviolet photoelectron spectroscopy measurement, negligible electron injection barrier between indium tin oxide (ITO) and Ag-doped m-bPPhenB (Φ_e ≈ 0.03 eV) is observed and the electrons can be easily tunneled from ITO into Ag-doped m-bPPhenB layer. Also, Ag dopant forms coordination bonds with phenanthroline based unit, which improves electron injection from ITO. Fabricated IOLED devices using an Ag-doped m-bPPhenB have an extremely low driving voltage of 3.6 V and external quantum efficiency of 29.0%. Such good performances of IOLED are attributed to negligible electron injection barrier at the interface between ITO and Ag-doped m-bPPhenB. The Ag-doped IOLED device also shows a good air stability owing to the stable Ag n-dopant. The doping of Ag into special electron transport layer in the IOLED structure could be applicable to various displays and lighting applications.