Efficient indium phosphate based quantum dot light emitting diodes using sol-gel processed electron transfer layer

Ji Eun Yeom; Dong Hyun Shin; Mude Nagarjuna Naik; Raju Lampande; Jang Hyuk Kwon

Efficient indium phosphate based quantum dot light emitting diodes using sol-gel processed electron transfer layer

Ji Eun Yeom, Dong Hyun Shin, Mude Nagarjuna Naik, Raju Lampande, Jang Hyuk Kwon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Here, we report an efficient indium phosphate (InP) based inverted red Quantum Dot-Light Emitting Diodes (QLEDs) by incorporating a sol-gel processed Mg-doped ZnO layer. The red InP-QLED with our sol-gel processed Mg:ZnO layer reveals a maximum EQE of 7.7%, which is significantly higher than the ZnO and Mg:ZnO nanoparticles layers. These results suggest that the sol-gel processed Mg-doped ZnO layer is relatively efficient in terms of performances.

Original language	English
Title of host publication	26th International Display Workshops, IDW 2019
Publisher	International Display Workshops
Pages	856-858
Number of pages	3
ISBN (Electronic)	9781713806301
Publication status	Published - 2019
Event	26th International Display Workshops, IDW 2019 - Sapporo, Japan Duration: 27 Nov 2019 → 29 Nov 2019

Publication series

Name	Proceedings of the International Display Workshops
Volume	2
ISSN (Print)	1883-2490

Conference

Conference	26th International Display Workshops, IDW 2019
Country/Territory	Japan
City	Sapporo
Period	27/11/19 → 29/11/19

Bibliographical note

Publisher Copyright:
© 2019 ITE and SID.

Keywords

InP-QD
Inverted structure
QLED
Quantum dot

Cite this

@inproceedings{60ab440077b7485a8e240766b0399d9d,

title = "Efficient indium phosphate based quantum dot light emitting diodes using sol-gel processed electron transfer layer",

abstract = "Here, we report an efficient indium phosphate (InP) based inverted red Quantum Dot-Light Emitting Diodes (QLEDs) by incorporating a sol-gel processed Mg-doped ZnO layer. The red InP-QLED with our sol-gel processed Mg:ZnO layer reveals a maximum EQE of 7.7%, which is significantly higher than the ZnO and Mg:ZnO nanoparticles layers. These results suggest that the sol-gel processed Mg-doped ZnO layer is relatively efficient in terms of performances.",

keywords = "InP-QD, Inverted structure, QLED, Quantum dot",

author = "Yeom, {Ji Eun} and Shin, {Dong Hyun} and Naik, {Mude Nagarjuna} and Raju Lampande and Kwon, {Jang Hyuk}",

note = "Publisher Copyright: {\textcopyright} 2019 ITE and SID.; 26th International Display Workshops, IDW 2019 ; Conference date: 27-11-2019 Through 29-11-2019",

year = "2019",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "856--858",

booktitle = "26th International Display Workshops, IDW 2019",

}

Yeom, JE, Shin, DH, Naik, MN, Lampande, R & Kwon, JH 2019, Efficient indium phosphate based quantum dot light emitting diodes using sol-gel processed electron transfer layer. in 26th International Display Workshops, IDW 2019. Proceedings of the International Display Workshops, vol. 2, International Display Workshops, pp. 856-858, 26th International Display Workshops, IDW 2019, Sapporo, Japan, 27/11/19.

Efficient indium phosphate based quantum dot light emitting diodes using sol-gel processed electron transfer layer. / Yeom, Ji Eun; Shin, Dong Hyun; Naik, Mude Nagarjuna et al.
26th International Display Workshops, IDW 2019. International Display Workshops, 2019. p. 856-858 (Proceedings of the International Display Workshops; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Efficient indium phosphate based quantum dot light emitting diodes using sol-gel processed electron transfer layer

AU - Yeom, Ji Eun

AU - Shin, Dong Hyun

AU - Naik, Mude Nagarjuna

AU - Lampande, Raju

AU - Kwon, Jang Hyuk

PY - 2019

Y1 - 2019

N2 - Here, we report an efficient indium phosphate (InP) based inverted red Quantum Dot-Light Emitting Diodes (QLEDs) by incorporating a sol-gel processed Mg-doped ZnO layer. The red InP-QLED with our sol-gel processed Mg:ZnO layer reveals a maximum EQE of 7.7%, which is significantly higher than the ZnO and Mg:ZnO nanoparticles layers. These results suggest that the sol-gel processed Mg-doped ZnO layer is relatively efficient in terms of performances.

AB - Here, we report an efficient indium phosphate (InP) based inverted red Quantum Dot-Light Emitting Diodes (QLEDs) by incorporating a sol-gel processed Mg-doped ZnO layer. The red InP-QLED with our sol-gel processed Mg:ZnO layer reveals a maximum EQE of 7.7%, which is significantly higher than the ZnO and Mg:ZnO nanoparticles layers. These results suggest that the sol-gel processed Mg-doped ZnO layer is relatively efficient in terms of performances.

KW - InP-QD

KW - Inverted structure

KW - QLED

KW - Quantum dot

UR - http://www.scopus.com/inward/record.url?scp=85105256299&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85105256299

T3 - Proceedings of the International Display Workshops

SP - 856

EP - 858

BT - 26th International Display Workshops, IDW 2019

PB - International Display Workshops

T2 - 26th International Display Workshops, IDW 2019

Y2 - 27 November 2019 through 29 November 2019

ER -

Efficient indium phosphate based quantum dot light emitting diodes using sol-gel processed electron transfer layer

Abstract

Publication series

Conference

Bibliographical note

Keywords

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