Abstract
The deterioration of the electrical characteristics of charge trap flash (CTF) memories with a silicon-oxide-nitride-oxide-silicon (SONOS) structure due to the charge traps in the oxide layers attributed to the random trapping and detrapping processes was investigated. Simulation results for the CTF memories showed that the threshold voltage shift was decreased by the charge trapped in the oxide layers in the SONOS structure and that the charge trapped in the blocking oxide had more significant effects than that trapped in the tunneling oxide. The degradation effects of the charge trapped in the blocking oxide on the electrical characteristics of the CTF memories were clarified by examining the vertical electric field in the device.
| Original language | English |
|---|---|
| Pages (from-to) | 533-536 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 67 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 19 Aug 2015 |
Bibliographical note
Publisher Copyright:© 2015, The Korean Physical Society.
Keywords
- CTF degradation
- Fixed charge
- RTN
- SONOS
- Threshold voltage shift
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