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Electrical performance and contact resistance with the substrate temperature in the pentacene organic thin-film transistors

  • Cheon An Lee
  • , Kyoung Chul Jang
  • , Sung Won Kim
  • , Ki Hyun Ryoo
  • , Sung Hun Jin
  • , Jong Duk Lee
  • , Hyung Cheol Shin
  • , Byung Gook Park

Research output: Contribution to journalConference articlepeer-review

Abstract

Bottom contact pentacene organic thin-film transistors are fabricated at three different substrate temperatures, 70°C, 80°C and 90°C. The maximum effective mobility was obtained at 80°C. The contact resistance was extracted by applying two different methods, TLM method and channelresistance method, and the value shows the minimum at 80°C, which is thought to be the important reason for the best performance.

Original languageEnglish
Pages (from-to)1317-1319
Number of pages3
JournalProceedings of International Meeting on Information Display
Volume2
Publication statusPublished - 2006
Event5th International Meeting on Information Display - Seoul, Korea, Republic of
Duration: 19 Jul 200523 Jul 2005

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