Electrical properties and structure of laser-spike-annealed hafnium oxide

Dong Hak Kim; Joon Won Park; You Min Chang; D. Lim; Haeyang Chung

doi:10.1016/j.tsf.2009.08.039

Electrical properties and structure of laser-spike-annealed hafnium oxide

Dong Hak Kim
, Joon Won Park
, You Min Chang
, D. Lim
, Haeyang Chung

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We studied the effects of laser-spike annealing (LSA) on hafnium oxide high-k dielectrics using high power diode laser. The equivalent oxide thickness of HfO₂ gate stacks annealed using a moderate laser power decreased noticeably as compared to as-grown films due to densification and crystallization of HfO₂. Transmission electron microscope and X-ray photoelectron spectroscopy show that regrowth of interfacial oxide and silication of HfO₂ layer are suppressed in case of LSA compared with rapid thermal annealing. Capacitance voltage hysteresis revealed stronger charge trapping/de-trapping behavior for LSA gate stacks as compared to rapid thermal annealed gate stack. However, bias-stress-induced flat band voltage shifts of LSA gate stacks were within acceptable levels, ≲ 30 mV, showing controllable threshold voltage.

Original language	English
Pages (from-to)	2812-2815
Number of pages	4
Journal	Thin Solid Films
Volume	518
Issue number	10
DOIs	https://doi.org/10.1016/j.tsf.2009.08.039
Publication status	Published - 1 Mar 2010

Keywords

Charge trap
Defects
Hafnium oxide
High-k dielectrics
Laser-spike annealing
Transmission electron spectroscopy
X-ray photoelectron spectroscopy

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10.1016/j.tsf.2009.08.039

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title = "Electrical properties and structure of laser-spike-annealed hafnium oxide",

abstract = "We studied the effects of laser-spike annealing (LSA) on hafnium oxide high-k dielectrics using high power diode laser. The equivalent oxide thickness of HfO2 gate stacks annealed using a moderate laser power decreased noticeably as compared to as-grown films due to densification and crystallization of HfO2. Transmission electron microscope and X-ray photoelectron spectroscopy show that regrowth of interfacial oxide and silication of HfO2 layer are suppressed in case of LSA compared with rapid thermal annealing. Capacitance voltage hysteresis revealed stronger charge trapping/de-trapping behavior for LSA gate stacks as compared to rapid thermal annealed gate stack. However, bias-stress-induced flat band voltage shifts of LSA gate stacks were within acceptable levels, ≲ 30 mV, showing controllable threshold voltage.",

keywords = "Charge trap, Defects, Hafnium oxide, High-k dielectrics, Laser-spike annealing, Transmission electron spectroscopy, X-ray photoelectron spectroscopy",

author = "Kim, \{Dong Hak\} and Park, \{Joon Won\} and Chang, \{You Min\} and D. Lim and Haeyang Chung",

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doi = "10.1016/j.tsf.2009.08.039",

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TY - JOUR

T1 - Electrical properties and structure of laser-spike-annealed hafnium oxide

AU - Kim, Dong Hak

AU - Park, Joon Won

AU - Chang, You Min

AU - Lim, D.

AU - Chung, Haeyang

PY - 2010/3/1

Y1 - 2010/3/1

N2 - We studied the effects of laser-spike annealing (LSA) on hafnium oxide high-k dielectrics using high power diode laser. The equivalent oxide thickness of HfO2 gate stacks annealed using a moderate laser power decreased noticeably as compared to as-grown films due to densification and crystallization of HfO2. Transmission electron microscope and X-ray photoelectron spectroscopy show that regrowth of interfacial oxide and silication of HfO2 layer are suppressed in case of LSA compared with rapid thermal annealing. Capacitance voltage hysteresis revealed stronger charge trapping/de-trapping behavior for LSA gate stacks as compared to rapid thermal annealed gate stack. However, bias-stress-induced flat band voltage shifts of LSA gate stacks were within acceptable levels, ≲ 30 mV, showing controllable threshold voltage.

AB - We studied the effects of laser-spike annealing (LSA) on hafnium oxide high-k dielectrics using high power diode laser. The equivalent oxide thickness of HfO2 gate stacks annealed using a moderate laser power decreased noticeably as compared to as-grown films due to densification and crystallization of HfO2. Transmission electron microscope and X-ray photoelectron spectroscopy show that regrowth of interfacial oxide and silication of HfO2 layer are suppressed in case of LSA compared with rapid thermal annealing. Capacitance voltage hysteresis revealed stronger charge trapping/de-trapping behavior for LSA gate stacks as compared to rapid thermal annealed gate stack. However, bias-stress-induced flat band voltage shifts of LSA gate stacks were within acceptable levels, ≲ 30 mV, showing controllable threshold voltage.

KW - Charge trap

KW - Defects

KW - Hafnium oxide

KW - High-k dielectrics

KW - Laser-spike annealing

KW - Transmission electron spectroscopy

KW - X-ray photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/76249102508

U2 - 10.1016/j.tsf.2009.08.039

DO - 10.1016/j.tsf.2009.08.039

M3 - Article

AN - SCOPUS:76249102508

SN - 0040-6090

VL - 518

SP - 2812

EP - 2815

JO - Thin Solid Films

JF - Thin Solid Films

IS - 10

ER -

Electrical properties and structure of laser-spike-annealed hafnium oxide

Abstract

Keywords

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