Electrical stability of flexible a-IGZO TFT under strained condition

Md Mehedi Hasan; Mohammad Masum Billah; Jin Jang

doi:10.1109/AM-FPD.2016.7543660

Electrical stability of flexible a-IGZO TFT under strained condition

Md Mehedi Hasan
, Mohammad Masum Billah
, Jin Jang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

We report the effect of tensile strain on the electrical performance of flexible a-In-Ga-Z-O (a-IGZO) thin-film transistor (TFT). Positive bias stress (PBS) measurement with Vgs = 20 V and V_ds = 0 V in a-IGZO TFTs show positive transfer shift due to the trapping of negative charges, likely electron trapping. We observed that tensile strained TFT with 2 mm bending radius exhibits a positive ΔV_Th (V) ∼2.3 V shift compared to flat condition TFT (ΔVth (V) ∼1.5 V) after 3.6K seconds stress. It clearly revels that more charges are trapped at the gate insulator/a-IGZO interface when the Fermi level is shifted downward by PBS with strained geometry.

Original language	English
Title of host publication	Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	187-188
Number of pages	2
ISBN (Electronic)	9784990875312
DOIs	https://doi.org/10.1109/AM-FPD.2016.7543660
Publication status	Published - 15 Aug 2016
Event	23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan Duration: 6 Jul 2016 → 8 Jul 2016

Publication series

Name	Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference	23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
Country/Territory	Japan
City	Kyoto
Period	6/07/16 → 8/07/16

Bibliographical note

Publisher Copyright:
© 2016 FTFMD.

Access to Document

10.1109/AM-FPD.2016.7543660

Cite this

Hasan, M. M., Billah, M. M., & Jang, J. (2016). Electrical stability of flexible a-IGZO TFT under strained condition. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 187-188). Article 7543660 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AM-FPD.2016.7543660

Hasan, Md Mehedi ; Billah, Mohammad Masum ; Jang, Jin. / Electrical stability of flexible a-IGZO TFT under strained condition. Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 187-188 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

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title = "Electrical stability of flexible a-IGZO TFT under strained condition",

abstract = "We report the effect of tensile strain on the electrical performance of flexible a-In-Ga-Z-O (a-IGZO) thin-film transistor (TFT). Positive bias stress (PBS) measurement with Vgs = 20 V and Vds = 0 V in a-IGZO TFTs show positive transfer shift due to the trapping of negative charges, likely electron trapping. We observed that tensile strained TFT with 2 mm bending radius exhibits a positive ΔVTh (V) ∼2.3 V shift compared to flat condition TFT (ΔVth (V) ∼1.5 V) after 3.6K seconds stress. It clearly revels that more charges are trapped at the gate insulator/a-IGZO interface when the Fermi level is shifted downward by PBS with strained geometry.",

author = "Hasan, \{Md Mehedi\} and Billah, \{Mohammad Masum\} and Jin Jang",

note = "Publisher Copyright: {\textcopyright} 2016 FTFMD.; 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 ; Conference date: 06-07-2016 Through 08-07-2016",

year = "2016",

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doi = "10.1109/AM-FPD.2016.7543660",

language = "English",

series = "Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",

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Hasan, MM, Billah, MM & Jang, J 2016, Electrical stability of flexible a-IGZO TFT under strained condition. in Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 7543660, Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Institute of Electrical and Electronics Engineers Inc., pp. 187-188, 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016, Kyoto, Japan, 6/07/16. https://doi.org/10.1109/AM-FPD.2016.7543660

Electrical stability of flexible a-IGZO TFT under strained condition. / Hasan, Md Mehedi; Billah, Mohammad Masum; Jang, Jin.
Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2016. p. 187-188 7543660 (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electrical stability of flexible a-IGZO TFT under strained condition

AU - Hasan, Md Mehedi

AU - Billah, Mohammad Masum

AU - Jang, Jin

PY - 2016/8/15

Y1 - 2016/8/15

N2 - We report the effect of tensile strain on the electrical performance of flexible a-In-Ga-Z-O (a-IGZO) thin-film transistor (TFT). Positive bias stress (PBS) measurement with Vgs = 20 V and Vds = 0 V in a-IGZO TFTs show positive transfer shift due to the trapping of negative charges, likely electron trapping. We observed that tensile strained TFT with 2 mm bending radius exhibits a positive ΔVTh (V) ∼2.3 V shift compared to flat condition TFT (ΔVth (V) ∼1.5 V) after 3.6K seconds stress. It clearly revels that more charges are trapped at the gate insulator/a-IGZO interface when the Fermi level is shifted downward by PBS with strained geometry.

AB - We report the effect of tensile strain on the electrical performance of flexible a-In-Ga-Z-O (a-IGZO) thin-film transistor (TFT). Positive bias stress (PBS) measurement with Vgs = 20 V and Vds = 0 V in a-IGZO TFTs show positive transfer shift due to the trapping of negative charges, likely electron trapping. We observed that tensile strained TFT with 2 mm bending radius exhibits a positive ΔVTh (V) ∼2.3 V shift compared to flat condition TFT (ΔVth (V) ∼1.5 V) after 3.6K seconds stress. It clearly revels that more charges are trapped at the gate insulator/a-IGZO interface when the Fermi level is shifted downward by PBS with strained geometry.

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DO - 10.1109/AM-FPD.2016.7543660

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T3 - Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

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BT - Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

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Hasan MM, Billah MM, Jang J. Electrical stability of flexible a-IGZO TFT under strained condition. In Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc. 2016. p. 187-188. 7543660. (Proceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). doi: 10.1109/AM-FPD.2016.7543660

Electrical stability of flexible a-IGZO TFT under strained condition

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