Abstract
We report on the electron emission properties of carbon nanotubes grown in holes with a triode-type direct-current (DC) plasma-enhanced chemical vapor deposition (PECVD) system. In this study, the growth of CNTs in gate holes for field-emission displays was performed by using a silicon-nitride (SiN x) capping layer on a Ni catalyst. The CNTs grown with a 3 μm hole pattern show the highest electron emission and the lowest turn-on field properties. The highest emission current of CNTs grown with a 3 μm hole pattern appears to be due to non-field screening by neighboring CNTS. Also, we can grow CNTs with a gate-hole pattern and measure the electron emission properties by using a triode structure. Two CNTs can be grown in gate holes with a 3 μm hole diameter. The electron emission anode current density is 0.9 μA/cm 2 at a 35 V gate bias and a 2.0 kV anode bias.
| Original language | English |
|---|---|
| Pages (from-to) | 1365-1368 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 48 |
| Issue number | 6 |
| Publication status | Published - Jun 2006 |
Keywords
- CNT
- Capping
- Electron emission
- Gate hole pattern
- PECVD
Fingerprint
Dive into the research topics of 'Electron emission from a carbon nanotube grown in a hole by using a triode plasma-enhanced chemical vapor deposition'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver