Energy level alignment at C_6o/Hf interface by using x-ray and ultraviolet photoelectron spectroscopy

Engineering

• Band Bending 50%
• Binding Energy 50%
• Electron Injection 100%
• Energy Band Diagram 50%
• Fermi Level 50%
• Field-Effect Transistor 50%
• Fullerene 50%
• Highest Occupied Molecular Orbital 50%
• Photoelectron 100%
• Stepwise Manner 50%
• Valence Band 50%

Physics

• Binding Energy 9%
• Energy Band 9%
• Field Effect Transistor 9%
• Fullerene 9%
• Hafnium 100%
• Photoelectron Spectroscopy 100%
• Work Function 9%
• X Ray Spectroscopy 18%

Material Science

• Field Effect Transistor 9%
• Fullerene 9%
• Hafnium 100%
• Ultra Violet Photoemission Spectroscopy 100%