Enhanced current mirror circuit by dual-gate coplanar amorphous InGaZnO TFTs

Abidur Rahaman; Apurba Adhikary; Mohammad Amzad Hossain; Md Mobaidul Islam; Jin Jang

doi:10.1002/cta.3198

Enhanced current mirror circuit by dual-gate coplanar amorphous InGaZnO TFTs

Abidur Rahaman, Apurba Adhikary, Mohammad Amzad Hossain, Md Mobaidul Islam, Jin Jang

Research output: Contribution to journal › Article › peer-review

Abstract

In this brief report, we state current mirror (CM) circuit employed by coplanar amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with dual-gate structure. The 2-TFT conventional structure with different mirroring ratios and 4-TFT cascode type are investigated. We compared the CM circuit performances made of the dual-gate (DG) and single-gate (SG) TFTs. At higher mirror gain, the percentage of error increases due to the issues such as TFT performance uniformity and threshold voltage shift. It is found that the DG-based CM circuit shows excellent mirror gain even at 10× with only 2% error.

Original language	English
Pages (from-to)	1015-1020
Number of pages	6
Journal	International Journal of Circuit Theory and Applications
Volume	50
Issue number	3
DOIs	https://doi.org/10.1002/cta.3198
Publication status	Published - Mar 2022

Bibliographical note

Publisher Copyright:
© 2021 John Wiley & Sons, Ltd.

Keywords

cascode CM
coplanar a-IGZO TFTs
current mirrors (CM)
dual gate (DG)
single gate (SG)

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10.1002/cta.3198

Cite this

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title = "Enhanced current mirror circuit by dual-gate coplanar amorphous InGaZnO TFTs",

abstract = "In this brief report, we state current mirror (CM) circuit employed by coplanar amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with dual-gate structure. The 2-TFT conventional structure with different mirroring ratios and 4-TFT cascode type are investigated. We compared the CM circuit performances made of the dual-gate (DG) and single-gate (SG) TFTs. At higher mirror gain, the percentage of error increases due to the issues such as TFT performance uniformity and threshold voltage shift. It is found that the DG-based CM circuit shows excellent mirror gain even at 10× with only 2% error.",

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AU - Rahaman, Abidur

AU - Adhikary, Apurba

AU - Hossain, Mohammad Amzad

AU - Islam, Md Mobaidul

AU - Jang, Jin

PY - 2022/3

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KW - cascode CM

KW - coplanar a-IGZO TFTs

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KW - single gate (SG)

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Enhanced current mirror circuit by dual-gate coplanar amorphous InGaZnO TFTs

Abstract

Bibliographical note

Keywords

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