Abstract
Field emission display (FED) was fabricated with carbon nanotube (CNT) emitters grown by resist-assisted patterning (RAP) process on glass substrate. The RAP Process is quite promising for field emitter fabrication for FED. We developed homogenized CNT emitter fabrication process with silicon-on glass (SOG) solution. The uniformity of electron emission current on substrate was strongly improved by the homogenizing process with SOG. We fabricated 3 inch FED with 32 pm sub-pixel size with the CNT emitters on glass substrate. Electron emission current shows threshold voltage of 2.5 V/pm field for emission current of 1 pA in diode measurement structure.
| Original language | English |
|---|---|
| Title of host publication | Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012 |
| Pages | 862-865 |
| Number of pages | 4 |
| Publication status | Published - 2012 |
| Event | 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan Duration: 4 Dec 2012 → 7 Dec 2012 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 2 |
| ISSN (Print) | 1883-2490 |
Conference
| Conference | 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 |
|---|---|
| Country/Territory | Japan |
| City | Kyoto |
| Period | 4/12/12 → 7/12/12 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 3 Good Health and Well-being
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