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Enhanced field emission display with carbon nanotube emitters grown by resist-assisted patterning process

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Field emission display (FED) was fabricated with carbon nanotube (CNT) emitters grown by resist-assisted patterning (RAP) process on glass substrate. The RAP Process is quite promising for field emitter fabrication for FED. We developed homogenized CNT emitter fabrication process with silicon-on glass (SOG) solution. The uniformity of electron emission current on substrate was strongly improved by the homogenizing process with SOG. We fabricated 3 inch FED with 32 pm sub-pixel size with the CNT emitters on glass substrate. Electron emission current shows threshold voltage of 2.5 V/pm field for emission current of 1 pA in diode measurement structure.

Original languageEnglish
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages862-865
Number of pages4
Publication statusPublished - 2012
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: 4 Dec 20127 Dec 2012

Publication series

NameProceedings of the International Display Workshops
Volume2
ISSN (Print)1883-2490

Conference

Conference19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
Country/TerritoryJapan
CityKyoto
Period4/12/127/12/12

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 3 - Good Health and Well-being
    SDG 3 Good Health and Well-being

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