Enhanced light extraction of GaN-based green light-emitting diodes with GaOOH rods

Hee Kwan Lee; Myung Sub Kim; Jae Su Yu

doi:10.1109/LPT.2011.2177455

Enhanced light extraction of GaN-based green light-emitting diodes with GaOOH rods

Hee Kwan Lee
, Myung Sub Kim
, Jae Su Yu

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We reported the enhanced light extraction efficiency in InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) with gallium oxide hydroxide (GaOOH) rods. The GaOOH rods were prepared by an aqueous gallium nitrate solution at 80°C and then coated on the surface of indium tin oxide electrodes of LEDs by a simple drop coating process. The synthesized GaOOH rods indicated a rhombus-shaped rod structure with average lengths of 2 μm and lateral dimensions of 50-500 nm. For LEDs with GaOOH rods, the light output powers were increased by 24.3% and 26.4% compared to the conventional LED on patterned sapphire substrate at 20 mA and 100 mA, respectively. Also, there was no distinct degradation in electrical characteristics of LEDs with GaOOH rods.

Original language	English
Article number	6086713
Pages (from-to)	285-287
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2011.2177455
Publication status	Published - 2012

Bibliographical note

Funding Information:
Manuscript received September 26, 2011; revised October 27, 2011; accepted November 17, 2011. Date of publication November 23, 2011; date of current version January 25, 2012. This work was supported in part by a grant from the Ministry of Knowledge Economy of the Republic of Korea, under Project 10039151.

Keywords

Drop coating process
GaN-based green light-emitting diodes (LEDs)
GaOOH rods
light extraction

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10.1109/LPT.2011.2177455

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title = "Enhanced light extraction of GaN-based green light-emitting diodes with GaOOH rods",

abstract = "We reported the enhanced light extraction efficiency in InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) with gallium oxide hydroxide (GaOOH) rods. The GaOOH rods were prepared by an aqueous gallium nitrate solution at 80°C and then coated on the surface of indium tin oxide electrodes of LEDs by a simple drop coating process. The synthesized GaOOH rods indicated a rhombus-shaped rod structure with average lengths of 2 μm and lateral dimensions of 50-500 nm. For LEDs with GaOOH rods, the light output powers were increased by 24.3\% and 26.4\% compared to the conventional LED on patterned sapphire substrate at 20 mA and 100 mA, respectively. Also, there was no distinct degradation in electrical characteristics of LEDs with GaOOH rods.",

keywords = "Drop coating process, GaN-based green light-emitting diodes (LEDs), GaOOH rods, light extraction",

author = "Lee, \{Hee Kwan\} and Kim, \{Myung Sub\} and Yu, \{Jae Su\}",

note = "Funding Information: Manuscript received September 26, 2011; revised October 27, 2011; accepted November 17, 2011. Date of publication November 23, 2011; date of current version January 25, 2012. This work was supported in part by a grant from the Ministry of Knowledge Economy of the Republic of Korea, under Project 10039151.",

year = "2012",

doi = "10.1109/LPT.2011.2177455",

language = "English",

volume = "24",

pages = "285--287",

journal = "IEEE Photonics Technology Letters",

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T1 - Enhanced light extraction of GaN-based green light-emitting diodes with GaOOH rods

AU - Lee, Hee Kwan

AU - Kim, Myung Sub

AU - Yu, Jae Su

N1 - Funding Information: Manuscript received September 26, 2011; revised October 27, 2011; accepted November 17, 2011. Date of publication November 23, 2011; date of current version January 25, 2012. This work was supported in part by a grant from the Ministry of Knowledge Economy of the Republic of Korea, under Project 10039151.

PY - 2012

Y1 - 2012

N2 - We reported the enhanced light extraction efficiency in InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) with gallium oxide hydroxide (GaOOH) rods. The GaOOH rods were prepared by an aqueous gallium nitrate solution at 80°C and then coated on the surface of indium tin oxide electrodes of LEDs by a simple drop coating process. The synthesized GaOOH rods indicated a rhombus-shaped rod structure with average lengths of 2 μm and lateral dimensions of 50-500 nm. For LEDs with GaOOH rods, the light output powers were increased by 24.3% and 26.4% compared to the conventional LED on patterned sapphire substrate at 20 mA and 100 mA, respectively. Also, there was no distinct degradation in electrical characteristics of LEDs with GaOOH rods.

AB - We reported the enhanced light extraction efficiency in InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) with gallium oxide hydroxide (GaOOH) rods. The GaOOH rods were prepared by an aqueous gallium nitrate solution at 80°C and then coated on the surface of indium tin oxide electrodes of LEDs by a simple drop coating process. The synthesized GaOOH rods indicated a rhombus-shaped rod structure with average lengths of 2 μm and lateral dimensions of 50-500 nm. For LEDs with GaOOH rods, the light output powers were increased by 24.3% and 26.4% compared to the conventional LED on patterned sapphire substrate at 20 mA and 100 mA, respectively. Also, there was no distinct degradation in electrical characteristics of LEDs with GaOOH rods.

KW - Drop coating process

KW - GaN-based green light-emitting diodes (LEDs)

KW - GaOOH rods

KW - light extraction

UR - https://www.scopus.com/pages/publications/84863030811

U2 - 10.1109/LPT.2011.2177455

DO - 10.1109/LPT.2011.2177455

M3 - Article

AN - SCOPUS:84863030811

SN - 1041-1135

VL - 24

SP - 285

EP - 287

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 4

M1 - 6086713

ER -

Enhanced light extraction of GaN-based green light-emitting diodes with GaOOH rods

Abstract

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Keywords

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